Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowires
暂无分享,去创建一个
Philippe Caroff | Chennupati Jagadish | Dhruv Saxena | Jeffrey A. Davis | Hark Hoe Tan | Lan Fu | Sudha Mokkapati | H. Tan | C. Jagadish | P. Caroff | S. Mokkapati | L. Fu | D. Saxena | Zhe Li | Zhe Li | Tim Burgess | C. Hall | T. Burgess | Yuda Wang | L. Smith | Christopher R. Hall | Yuda Wang | Leigh M. Smith | C. Hall
[1] Xiang Zhang,et al. Plasmon lasers at deep subwavelength scale , 2009, Nature.
[2] W. Prost,et al. Optical properties of heavily doped GaAs nanowires and electroluminescent nanowire structures. , 2011, Nanotechnology.
[3] E. Yablonovitch,et al. Band bending, Fermi level pinning, and surface fixed charge on chemically prepared GaAs surfaces , 1989 .
[4] C. Chang-Hasnain,et al. Atomically sharp catalyst-free wurtzite GaAs /AlGaAs nanoneedles grown on silicon , 2008 .
[5] J. Rivas,et al. Enhanced and directional emission of semiconductor nanowires tailored through leaky/guided modes. , 2013, Nanoscale.
[6] M. Guzzi,et al. Electron-hole plasma in direct-gap Ga 1 − x Al x As and k -selection rule , 1984 .
[7] Xiang Zhang,et al. Multiplexed and electrically modulated plasmon laser circuit. , 2012, Nano letters.
[8] K. Ploog,et al. Effect of photoexcitation on the surface band bending in δ‐doped GaAs:Si/Al0.33Ga0.67As double heterostructures , 1992 .
[10] Pallab Bhattacharya,et al. Monolithic electrically injected nanowire array edge-emitting laser on (001) silicon. , 2014, Nano letters.
[11] Yasuhiko Arakawa,et al. Room-temperature lasing in a single nanowire with quantum dots , 2015 .
[12] Chang-Hee Cho,et al. Silicon coupled with plasmon nanocavity generates bright visible hot-luminescence , 2013, Nature Photonics.
[13] T. Xu,et al. Band offsets at zincblende-wurtzite GaAs nanowire sidewall surfaces , 2013 .
[14] E. Vogel,et al. Comparison of n-type and p-type GaAs oxide growth and its effects on frequency dispersion characteristics , 2008 .
[15] S. T. Picraux,et al. Diameter-dependent electronic transport properties of Au-catalyst/Ge-nanowire Schottky diodes. , 2009, Physical review letters.
[16] Yiying Wu,et al. Room-Temperature Ultraviolet Nanowire Nanolasers , 2001, Science.
[17] Shadi A. Dayeh,et al. Advances in the synthesis of InAs and GaAs nanowires for electronic applications , 2009 .
[18] Peter D. Kirchner,et al. Unpinned (100) GaAs surfaces in air using photochemistry , 1986 .
[19] K. Köhler,et al. Auger recombination in intrinsic GaAs , 1993 .
[20] Chennupati Jagadish,et al. Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy , 2013, Nanotechnology.
[21] A. Koma,et al. Electronic surface states on clean and oxygen‐exposed GaAs surfaces , 1976 .
[22] L. Allen,et al. Amplified spontaneous emission I. The threshold condition , 1971 .
[23] L. Jastrzebski,et al. Application of scanning electron microscopy to determination of surface recombination velocity: GaAs , 1975 .
[24] H. Jackson,et al. Transient Rayleigh scattering: a new probe of picosecond carrier dynamics in a single semiconductor nanowire. , 2012, Nano letters.
[25] Soo‐Ghang Ihn,et al. Optical properties of undoped, Be-doped, and Si-doped wurtzite-rich GaAs nanowires grown on Si substrates by molecular beam epitaxy , 2010 .
[26] S. Rubini,et al. Photoluminescence of GaAs nanowires at an energy larger than the zincblende band-gap: dependence on growth parameters , 2015 .
[27] T. Sigmon,et al. Deep level transient spectroscopy study of GaAs surface states treated with inorganic sulfides , 1988 .
[28] Peter W Voorhees,et al. Direct measurement of dopant distribution in an individual vapour-liquid-solid nanowire. , 2009, Nature nanotechnology.
[29] Pallab Bhattacharya,et al. Room temperature ultralow threshold GaN nanowire polariton laser. , 2011, Physical review letters.
[30] E. Lörtscher,et al. Inducing a direct-to-pseudodirect bandgap transition in wurtzite GaAs nanowires with uniaxial stress , 2014, Nature Communications.
[31] X. Liu,et al. Wavelength Tunable CdSe Nanowire Lasers Based on the Absorption‐Emission‐Absorption Process , 2013, Advanced materials.
[32] D. Lang,et al. Nonradiative capture and recombination by multiphonon emission in GaAs and GaP , 1977 .
[33] H. Tan,et al. Selective-area epitaxy of pure wurtzite InP nanowires: high quantum efficiency and room-temperature lasing. , 2014, Nano letters.
[34] K. Hirose,et al. Surface States for the GaAs(001) Surfaces Observed by Photoemission Yield Spectroscopy , 1991 .
[35] H. Tan,et al. Optically pumped room-temperature GaAs nanowire lasers , 2013, Nature Photonics.
[36] C. Merckling,et al. Polytypic InP nanolaser monolithically integrated on (001) silicon. , 2013, Nano letters.
[37] H. Casey,et al. Concentration‐dependent absorption and spontaneous emission of heavily doped GaAs , 1976 .
[38] X. Ren,et al. Evanescent-wave pumped room-temperature single-mode GaAs/AlGaAs core-shell nanowire lasers , 2014 .
[39] A. Ougazzaden,et al. Microfabrication and optical study of reactive ion etched InGaAsP/InP and GaAs/GaAlAs quantum wires , 1990 .
[40] C. Henry. Deep level spectroscopy, low temperature defect motion and nonradiative recombination in GaAs and GaP , 1975 .
[41] Takashi Fukui,et al. Single GaAs/GaAsP coaxial core-shell nanowire lasers. , 2009, Nano letters.
[42] Lyubov V. Titova,et al. Temperature dependence of photoluminescence from single core-shell GaAs–AlGaAs nanowires , 2006 .
[43] L. Chernyak,et al. Electrically pumped waveguide lasing from ZnO nanowires. , 2011, Nature nanotechnology.
[44] B. Borg,et al. Controlling the abruptness of axial heterojunctions in III-V nanowires: beyond the reservoir effect. , 2012, Nano letters.
[45] Richard K. Ahrenkiel,et al. Auger recombination in heavily carbon-doped GaAs , 2001 .
[46] R. J. Nelson,et al. Minority‐carrier lifetimes and internal quantum efficiency of surface‐free GaAs , 1978 .
[47] A. Forchel,et al. Time resolved spectroscopy on etched GaAs/GaAlAs-quantum-microstructures , 1989 .
[48] H. Jackson,et al. Resonant excitation and imaging of nonequilibrium exciton spins in single core-shell GaAs-AlGaAs nanowires. , 2007, Nano letters (Print).
[49] A. Fontcuberta i Morral,et al. P-doping mechanisms in catalyst-free gallium arsenide nanowires. , 2010, Nano letters.
[50] Kelly P. Knutsen,et al. Single gallium nitride nanowire lasers , 2002, Nature materials.
[51] F. Pollak. Contactless electromodulation investigations of surface/interface electric fields in semiconductor microstructures , 1993 .
[52] H. Tan,et al. An order of magnitude increase in the quantum efficiency of (Al)GaAs nanowires using hybrid photonic-plasmonic modes. , 2015, Nano letters.
[53] Yong Ding,et al. Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers. , 2008, Nature materials.
[54] C. Weisbuch,et al. Radiative recombination in GaAs‐AlxGa1−xAs quantum dots , 1992 .
[55] E. A. Kraut,et al. Correlation of GaAs surface chemistry and interface Fermi‐level position: A single defect model interpretation , 1981 .
[56] Z. Lu,et al. Determination of band gap narrowing and hole density for heavily C‐doped GaAs by photoluminescence spectroscopy , 1994 .
[57] W. Prost,et al. Direct determination of minority carrier diffusion lengths at axial GaAs nanowire p-n junctions. , 2012, Nano letters.
[58] Hannah J Joyce,et al. Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping. , 2016, ACS nano.
[59] Chennupati Jagadish,et al. Influence of Electrical Design on Core–Shell GaAs Nanowire Array Solar Cells , 2015, IEEE Journal of Photovoltaics.
[60] B. Fimland,et al. A story told by a single nanowire: optical properties of wurtzite GaAs. , 2012, Nano letters.
[61] Federico Capasso,et al. Laser action in nanowires: Observation of the transition from amplified spontaneous emission to laser oscillation , 2008 .
[62] C. Chang-Hasnain,et al. Nanopillar lasers directly grown on silicon with heterostructure surface passivation. , 2014, ACS nano.
[63] J. Woodall,et al. Air stabilized (001) p‐type GaAs fabricated by molecular beam epitaxy with reduced surface state density , 1994 .
[64] David E. Aspnes,et al. RECOMBINATION AT SEMICONDUCTOR SURFACES AND INTERFACES , 1983 .
[65] Ningfeng Huang,et al. Electrical and optical characterization of surface passivation in GaAs nanowires. , 2012, Nano letters.
[66] Gennady Shvets,et al. Plasmonic Nanolaser Using Epitaxially Grown Silver Film , 2012, Science.
[67] T. Ishibashi,et al. Surface Recombination Velocity in p-Type GaAs , 1994 .
[68] Carrier thermalization dynamics in single zincblende and wurtzite InP Nanowires. , 2014, Nano letters.
[69] W. Prost,et al. Recombination dynamics in single GaAs-nanowires with an axial heterojunction: n- versus p-doped areas , 2013 .
[70] Evelyn L. Hu,et al. Large spontaneous emission enhancement in plasmonic nanocavities , 2012, Nature Photonics.
[71] G. Abstreiter,et al. Lasing from individual GaAs-AlGaAs core-shell nanowires up to room temperature , 2013, Nature Communications.
[72] H. Tan,et al. Mode Profiling of Semiconductor Nanowire Lasers. , 2015, Nano letters.
[73] M. Gather,et al. Advances in small lasers , 2014, Nature Photonics.
[74] C. Nuese,et al. Comparison of Zn‐doped GaAs layers prepared by liquid‐phase and vapor‐phase techniques, including diffusion lengths and photoluminescence , 1975 .
[75] J. M. Worlock,et al. Determination of nonradiative surface layer thickness in quantum dots etched from single quantum well GaAs/AlGaAs , 1989 .
[76] P. H. Citrin,et al. Chemical preparation of GaAs surfaces and their characterization by Auger electron and x‐ray photoemission spectroscopies , 1977 .
[77] R. Conradt,et al. Auger recombination in GaAs and GaSb , 1977 .
[78] J. Woodall,et al. Photoreflectance study of the surface Fermi level at (001) n‐ and p‐type GaAs surfaces , 1992 .
[79] C. Jagadish,et al. Twinning superlattice formation in GaAs nanowires. , 2013, ACS nano.
[80] C. Sébenne,et al. Intrinsic and Defect-Induced Surface States of Cleaved GaAs(110) , 1976 .
[81] Constance J. Chang-Hasnain. Nanolasers Grown on Silicon , 2012 .
[82] Charles M Lieber,et al. Lasing in single cadmium sulfide nanowire optical cavities. , 2005, Nano letters.
[83] Charles M. Lieber,et al. Single-nanowire electrically driven lasers , 2003, Nature.
[84] L. Coldren,et al. Diode Lasers and Photonic Integrated Circuits , 1995 .
[85] Martin Heiss,et al. Impact of surfaces on the optical properties of GaAs nanowires , 2010 .
[86] Chennupati Jagadish,et al. Long minority carrier lifetime in Au-catalyzed GaAs/AlxGa1−xAs core-shell nanowires , 2012 .
[87] Z. Mi,et al. Ultralow-threshold electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperature. , 2015, Nature nanotechnology.
[88] Stefan A. Maier,et al. Ultrafast plasmonic nanowire lasers near the surface plasmon frequency , 2014, Nature Physics.
[89] Milton Feng,et al. Transistor laser with simultaneous electrical and optical output at 20 and 40 Gb/s data rate modulation , 2011 .
[90] Yasuhiko Arakawa,et al. Low-Threshold near-Infrared GaAs–AlGaAs Core–Shell Nanowire Plasmon Laser , 2015 .
[91] A. Mizrahi,et al. Thresholdless nanoscale coaxial lasers , 2011, Nature.
[92] V. Dubrovskii,et al. Zeldovich Nucleation Rate, Self-Consistency Renormalization, and Crystal Phase of Au-Catalyzed GaAs Nanowires , 2015 .
[93] K. Dick,et al. Crystal phase control in GaAs nanowires: opposing trends in the Ga- and As-limited growth regimes , 2015, Nanotechnology.
[94] Jenn-Shyong Hwang,et al. Determination of surface state density for GaAs and InAlAs by room temperature photoreflectance , 1999 .