论文信息 - Femtosecond studies of carrier dynamics in InGaN

Femtosecond studies of carrier dynamics in InGaN

Ultrafast carrier dynamics in In0.16Ga0.84N were investigated using femtosecond transient transmission measurements. We observed a fast initial carrier cooling on a time scale of 500 fs followed by a slow relaxation process which persisted longer than 5 ps due to a hot phonon effect. Band gap renormalization induced transient absorption was observed using a probe photon energy 300 meV above the band edge. These results were compared to a model based on the numerical resolution of the carrier Boltzmann equations.

[1] S. Nakamura,et al. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes , 1996 .

[2] A. Gossard,et al. Picosecond luminescence measurements of hot carrier relaxation in III–V semiconductors using sum frequency generation , 1985 .

[3] Larry A. Coldren,et al. Growth and characterization of bulk InGaN films and quantum wells , 1996 .

[4] P. J. Dean,et al. Optical studies of the phonons and electrons in gallium nitride , 1970 .

[5] Westerhoff,et al. High-pressure Raman scattering of the stretching mode in nitrogen along the 300-K isotherm. , 1996, Physical review. B, Condensed matter.

[6] Yotaro Murakami,et al. Preparation and optical properties of Ga1−xInxN thin films , 1975 .

[7] Ravindra P. Joshi,et al. Nonequilibrium electron distributions and phonon dynamics in wurtzite GaN , 1996 .

[8] Vallée,et al. Nonequilibrium hole relaxation dynamics in an intrinsic semiconductor. , 1996, Physical review. B, Condensed matter.

[9] Takashi Mukai,et al. High‐brightness InGaN/AlGaN double‐heterostructure blue‐green‐light‐emitting diodes , 1994 .