Exposure dose dependence on line edge roughness of a latent image in electron beam/extreme ultraviolet lithographies studied by Monte Carlo technique

Of great importance in post-optical lithographies, such as electron beam (EB) and extreme ultraviolet, is the improvement of line edge roughness or line width roughness of patterned resists. We provide an exposure dose dependence on LER of a latent image in chemically amplified EB resist from 1 to 50 µC/cm2. By using a Monte Carlo simulation and empirical equations, the effects of exposure dose and amine concentration on LER are investigated in terms of shot noise and image contrast. We make clear the correlation between LER and the fluctuation of the initial number of acid molecules generated in resists.

[1]  Hiroki Yamamoto,et al.  Proton and anion distribution and line edge roughness of chemically amplified electron beam resist , 2005 .

[2]  Takahiro Kozawa,et al.  Relation between spatial resolution and reaction mechanism of chemically amplified resists for electron beam lithography , 2003 .

[3]  Takahiro Kozawa,et al.  Radiation-induced reactions of chemically amplified x-ray and electron-beam resists based on deprotection of t-butoxycarbonyl groups , 1997 .

[4]  Martha I. Sanchez,et al.  Chemical and physical aspects of the post-exposure baking process used for positive-tone chemically amplified resists , 2001, IBM J. Res. Dev..

[5]  Hiroshi Ito.  Chemical amplification resists for microlithography , 2005 .

[6]  C. Willson,et al.  Chemical amplification in the design of dry developing resist materials , 1983 .

[7]  P. Kruit,et al.  Local critical dimension variation from shot-noise related line edge roughness , 2005 .

[8]  M. Kotera,et al.  Dependence of linewidth and its edge roughness on electron beam exposure dose , 2005 .

[9]  H. Namatsu,et al.  Line-Edge Roughness: Characterization and Material Origin , 2002, 2002 International Microprocesses and Nanotechnology Conference, 2002. Digest of Papers..

[10]  S. Tagawa,et al.  Multi spur effect on decay kinetics of geminate ion recombination using Monte Carlo technique , 2005 .

[11]  M. Smoluchowski.  Versuch einer mathematischen Theorie der Koagulationskinetik kolloider Lösungen , 1918 .

[12]  Study on radiation-induced reaction in microscopic region for basic understanding of electron beam patterning in lithographic process (II) relation between resist space resolution and space distribution of ionic species , 2001, Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468).

[13]  F. Cerrina,et al.  Process dependence of roughness in a positive-tone chemically amplified resist , 1998 .

[14]  Takahiro Kozawa,et al.  Radiation-Induced Acid Generation Reactions in Chemically Amplified Resists for Electron Beam and X-Ray Lithography , 1992 .

[15]  Bryan J. Rice,et al.  Sources of line-width roughness for EUV resists , 2004, SPIE Advanced Lithography.

[16]  Gregg M. Gallatin.  Resist blur and line edge roughness (Invited Paper) , 2004, SPIE Advanced Lithography.

[17]  James W. Taylor,et al.  Factors contributing to sidewall roughness in a positive-tone, chemically amplified resist exposed by x-ray lithography , 1999 .

[18]  Studies on Reaction Mechanisms of EB Resist by Pulse Radiolysis , 2000 .

[19]  C. Grant Willson,et al.  Understanding molecular-level effects during post-exposure processing , 2001, SPIE Advanced Lithography.

[20]  S. Tagawa,et al.  Line edge roughness of a latent image in post-optical lithography. , 2006, Nanotechnology.

[21]  Takahiro Kozawa,et al.  Reactivity of Acid Generators for Chemically Amplified Resists with Low-Energy Electrons , 2006 .

[22]  Shigeru Moriya,et al.  Study of the acid-diffusion effect on line edge roughness using the edge roughness evaluation method , 2002 .

[23]  Hiroki Yamamoto,et al.  Proton Dynamics in Chemically Amplified Electron Beam Resists , 2004 .

[24]  S. Tagawa,et al.  Modeling and simulation of chemically amplified electron beam, x-ray, and EUV resist processes , 2004 .