SPICE MODELING OF COMPOUND SEMICONDUCTOR DEVICES

We review recent advances in the modeling of novel and advanced semiconductor devices, including state-of-the-art MESFET and HFETs, heterodimensional FETs, resonant tunneling devices, and wide-bandgap semiconductor transistors. We emphasize analytical, physics-based modeling incorporating the important effects present in modern day devices, including deep sub-micrometer devices. Such an approach is needed in order to accurately describe and predict both stationary and dynamic device behavior and to make the models suitable for implementation in advanced computer aided design tool including circuit simulators such as SPICE.

[1]  M. Shur,et al.  A novel Schottky/2-DEG diode for millimeter- and submillimeter-wave multiplier applications , 1992, IEEE Electron Device Letters.

[2]  M. Shur,et al.  Strain and charge distribution in GaN‐AlN‐GaN semiconductor‐insulator‐semiconductor structure for arbitrary growth orientation , 1993 .

[3]  A. Burk,et al.  High power operation of 4H-SiC MESFETs at 10 GHz , 1997, 1997 55th Annual Device Research Conference Digest.

[4]  B. Moon,et al.  A new technique to determine the average low-field electron mobility in MESFET using C-V measurement , 1992 .

[5]  M. Shur,et al.  Unified charge control model and subthreshold current in heterostructure field-effect transistors , 1990, IEEE Electron Device Letters.

[6]  Origin and modeling of the frequency dependent output conductance in microwave GaAs MESFET's with bu , 1994 .

[7]  J. Graffeuil,et al.  Output conductance frequency dispersion and low-frequency noise in HEMTs and MESFETs , 1989 .

[8]  Michael S. Shur,et al.  Modeling frequency dependence of GaAs MESFET characteristics , 1994 .

[9]  TWO-DIMENSIONAL ELECTRONS IN FIELD EFFECT TRANSISTORS , 1998 .

[10]  M. Shur,et al.  Ion-implanted 0.4 /spl mu/m wide 2-D MESFET for low power electronics , 1996 .

[11]  M. Shur.  Chapter 4 SiC Transistors , 1998 .

[12]  Trond Ytterdal,et al.  Enhanced heterostructure field effect transistor CAD model suitable for simulation of mixed mode circuits , 1999 .

[13]  M. Shur,et al.  Current‐voltage characteristics of strained piezoelectric structures , 1995 .

[14]  M. Shur,et al.  Two-channel AlGaN/GaN heterostructure field effect transistor for high power applications , 1999 .

[15]  Boris Gelmont,et al.  Theory of junction between two-dimensional electron gas and p-type semiconductor , 1992 .

[16]  Steven M. Baier,et al.  A new and simple model for GaAs heterojunction FET gate characteristics , 1988 .

[17]  J. Haruyama,et al.  Kink effect related to the self-side-gating effect in GaAs MESFET's , 1994 .

[18]  Raymond F. Jurgens,et al.  High-Temperature Electronics Applications in Space Exploration , 1982, IEEE Transactions on Industrial Electronics.

[19]  Michael S. Shur,et al.  Distributive nature of gate current and negative transconductance in heterostructure field-effect transistors , 1989 .

[20]  R. Goyal,et al.  A low-frequency GaAs MESFET circuit model , 1988 .

[21]  H.J. De Los Santos,et al.  Physics-based RTD current-voltage equation , 1996, IEEE Electron Device Letters.

[22]  Michael S. Shur,et al.  Enhanced GaAs MESFET CAD model for a wide range of temperatures , 1995 .

[23]  K. Doverspike,et al.  High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates , 1999, IEEE Electron Device Letters.

[24]  John W. Palmour,et al.  Improved oxidation procedures for reduced SiO2/SiC defects , 1996 .

[25]  Y.-F. Wu,et al.  High Al-content AlGaN/GaN MODFETs for ultrahigh performance , 1998, IEEE Electron Device Letters.

[26]  M. Shur,et al.  Pyroelectricity in gallium nitride thin films , 1996 .

[27]  Michael S. Shur,et al.  Narrow channel 2-D MESFET for low power electronics , 1995 .

[28]  Michael S. Shur,et al.  RTD/2-D MESFET logic element for compact, ultra-low-power electronics , 1997 .

[29]  W.C.B. Peatman,et al.  Two-dimensional metal-semiconductor field effect transistor for ultra low power circuit applications , 1994, IEEE Electron Device Letters.

[30]  Michael S. Shur,et al.  Electron density of the two‐dimensional electron gas in modulation doped layers , 1983 .

[31]  G. Maracas,et al.  Frequency-dependent electrical characteristics of GaAs MESFETs , 1990 .

[32]  M. Shur,et al.  Elastic strain relaxation in GaNAlNGaN semiconductorinsulatorsemiconductor structures , 1995 .

[33]  Michael S. Shur,et al.  A unified current-voltage model for long-channel nMOSFETs , 1991 .

[34]  M. Hurt,et al.  Novel heterodimensional diodes and transistors , 1995 .

[35]  Roberto Menozzi,et al.  Numerical analysis of the gate voltage dependence of the series resistances and effective channel length in submicrometer GaAs MESFETs , 1992 .

[36]  T. A. Fjeldly,et al.  A new charge conserving capacitance model for GaAs MESFET's , 1997 .

[37]  Lester F. Eastman,et al.  75 Å GaN channel modulation doped field effect transistors , 1996 .

[38]  F. S. Shoucair,et al.  High-temperature electrical characteristics of GaAs MESFETs (25-400 degrees C) , 1992 .

[39]  N. Cheung,et al.  On the temperature variation of threshold voltage of GaAs MESFETs , 1992 .

[40]  Steven M. Baier,et al.  Complementary heterostructure FET technology for low power, high speed digital applications , 1996 .

[41]  L. Rowland,et al.  Microwave performance of GaN MESFETs , 1994 .

[42]  Michael S. Shur,et al.  The influence of the strain‐induced electric field on the charge distribution in GaN‐AlN‐GaN structure , 1993 .

[43]  K. Endo,et al.  Electrical Properties of 3C-SiC and its application to FET , 1987 .

[44]  H. Matsunami,et al.  Thermal Oxidation of SiC and Electrical Properties of Al–SiO2–SiC MOS Structure , 1982 .

[45]  Self-aligned 6H-SiC MOSFETs with improved current drive , 1995 .

[46]  Michael S. Shur,et al.  TEMPERATURE DEPENDENCE OF THE I-V CHARACTERISTICS OF MODULATION-DOPED FETs. , 1983 .

[47]  Trond Ytterdal,et al.  UNIFIED GaAs MESFET MODEL FOR CIRCUIT SIMULATIONS , 1992 .

[48]  T. Ytterdal,et al.  Sub-half-micrometer width 2-D MESFET , 1996, IEEE Electron Device Letters.

[49]  C. Kocot,et al.  Backgating in GaAs MESFET's , 1982, IEEE Transactions on Electron Devices.

[50]  R.W. Dutton,et al.  A charge-oriented model for MOS transistor capacitances , 1978, IEEE Journal of Solid-State Circuits.

[51]  Sub-0.1 mu m MOSFET modelling and circuit simulation , 1994 .

[52]  Tor A. Fjeldly,et al.  A new approach for modeling of current degradation in hot-electron damaged LDD NMOSFETs , 1995 .

[53]  D. Delagebeaudeuf,et al.  Metal-(n) AlGaAs-GaAs two-dimensional electron gas FET , 1982, IEEE Transactions on Electron Devices.

[54]  Michael S. Shur,et al.  Low field mobility of 2‐d electron gas in modulation doped AlxGa1−xAs/GaAs layers , 1983 .

[55]  Michael S. Shur,et al.  Piezoresistive effect in wurtzite n‐type GaN , 1996 .

[56]  J. Palmour,et al.  Characterization of device parameters in high-temperature metal-oxide-semiconductor field-effect transistors in β-SiC thin films , 1988 .

[57]  Michael S. Shur,et al.  Substrate Bias Effects in AlGaN/GaN Doped Channel Heterostructure Field Effect Transistors Grown on Doped SiC Substrates , 1997 .

[58]  A. Peczalski,et al.  Gate-voltage dependence of source and drain series resistances and effective gate length in GaAs MESFETs , 1988 .

[59]  W.C.B. Peatman,et al.  Novel resonant tunneling transistor with high transconductance at room temperature , 1994, IEEE Electron Device Letters.