Caracterización y Modelado de Dispositivos Semiconductores Para Uso en Sistemas de Telecomunicaciones a Frecuencias de Terahercios

espanolEl objetivo de esta tesis ha sido el estudio, la caracterizacion y el modelado de diodos Schottky, desde continua (DC) hasta la banda de frecuencia W. Se trata de diodos comerciales que se han desarrollado en Virginia Diodes: un diodo Schottky simple (SA), un diodo Zero Bias (ZBD) y una configuracion de dos diodos en antiparalelo. El modelado se ha realizado mediante una combinacion de medidas en continua, medidas en baja frecuencia, medidas de los parametros de scattering para dos rangos recuenciales (DC-50GHz, 75-110GHz), medidas Pin/Pout, y medidas del montaje de un conjunto de transiciones de coplanar a microstrip, unidas mediante hilos de �bonding� para llevar a cabo el proceso de obtencion de los parametros de los diodos y lograr sus modelos completos finales hasta 110GHz, medidas directas sobre el diodo utilizando puntas de prueba coplanares en los contactos del anodo y el catodo de los diodos, para verificar que la coherencia del modelo no se ve afectada por los efectos parasitos asociados a los hilos de �bonding�, y a las transiciones. Se ha realizado tambien un analisis completo del ruido de los diodos que incluye caracterizacion, medidas, modelado y simulacion, para examinar las propiedades de ruido en baja frecuencia de los diodos Schottky de GaAs. EnglishThe main goal of this thesis has been the study, discussion, characterization and modeling of a wideband Schottky diode, from Direct Current (DC) to W band, for three type of Schottky diode that have been developed at Virginia Diodes: a single Anode Schottky Diode, Zero Bias Diode (ZBD) and configuration of antiparalel Diode based on a commercial VDI chip. The modelling has been done using a combination of DC measurements, capacitance measurements, RF Scattering measurements, and measurements of the assembly of Coplanar to Microstrip bonded transitions has been performed and used to achieve the complete final diode model up to 110 GHz. Also, on chip (direct) measurements were done by placing a couple of probe tips on the anode and cathode pads of diodes to verify that the coherence of the model is not affected by the surrounding parasitic effects associated with wire bonding and transitions. A complete characterization, analysis, simulation and modeling of noise will be presented, to examine for the low-frequency noise properties of VDI�s GaAs Schottky diodes.

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