Properties of zinc‐phosphide junctions and interfaces

The phenomena occurring at the surface of bulk polycrystalline zinc phosphide and at interfaces of zinc‐phosphide‐based devices have been investigated. Electrical measurements of magnesium/zinc‐phosphide junctions formed on annealed zinc‐phosphide surfaces, and analyses of similar surfaces by Auger electron spectroscopy, indicate that loss of phosphorus from a very thin surface region is sufficient to severely degrade diode characteristics. Surface photovoltage measurements show that at the surface of as‐etched or as‐polished zinc phosphide, the energy bands are nearly flat. High‐frequency capacitance measurements of aluminum/aluminum‐oxide/zinc‐phosphide structures indicate that a high interface state density, greater than 1013 eV−1 cm−2, prevents barrier formation by pinning the surface Fermi level. These properties severely limit the applicability of zinc phosphide to electronic devices.

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