Asymmetric MSM sub-bandgap all-silicon photodetector with low dark current.

Design, fabrication, and characterization of an asymmetric metal-semiconductor-metal photodetector, based on internal photoemission effect and integrated into a silicon-on-insulator waveguide, are reported. For this photodetector, a responsivity of 4.5 mA/W has been measured at 1550 nm, making it suitable for power monitoring applications. Because the absorbing metal is deposited strictly around the vertical output facet of the waveguide, a very small contact area of about 3 µm2 is obtained and a transit-time-limited bandwidth of about 1 GHz is demonstrated. Taking advantage of this small area and electrode asymmetry, a significant reduction in the dark current (2.2 nA at -21 V) is achieved. Interestingly, applying reverse voltage, the photodetector is able to tune its cut-off wavelength, extending its range of application into the MID infrared regime.

[1]  Yi-Jen Chiu,et al.  Metal-semiconductor-metal traveling-wave photodetectors , 2001, IEEE Photonics Technology Letters.

[2]  Ivo Rendina,et al.  Cu/p-Si Schottky barrier-based near infrared photodetector integrated with a silicon-on-insulator waveguide , 2010 .

[3]  R. Fowler,et al.  The Analysis of Photoelectric Sensitivity Curves for Clean Metals at Various Temperatures , 1931 .

[4]  Luigi Moretti,et al.  Design of a silicon resonant cavity enhanced photodetector based on the internal photoemission effect at 1.55 µm , 2006 .

[5]  Richard A. Soref,et al.  Silicon waveguided components for the long-wave infrared regionThis article was submitted to the spe , 2006 .

[6]  Bahram Jalali,et al.  Nonlinear absorption in silicon and the prospects of mid‐infrared silicon Raman lasers , 2006 .

[7]  Ivo Rendina,et al.  Critically coupled silicon Fabry-Perot photodetectors based on the internal photoemission effect at 1550 nm. , 2012, Optics express.

[8]  Joseph Shappir,et al.  Waveguide based compact silicon Schottky photodetector with enhanced responsivity in the telecom spectral band. , 2012, Optics express.

[9]  F. D. Corte,et al.  All-optical modulation in a CMOS-compatible amorphous silicon-based device , 2012 .

[10]  Patrick Fay,et al.  InGaAs metal-semiconductor-metal photodetectors with engineered Schottky barrier heights , 1996 .

[11]  Mark Y. Liu,et al.  Internal emission metal‐semiconductor‐metal photodetectors on Si and GaAs for 1.3 μm detection , 1995 .

[12]  B. Tsaur,et al.  IrSi Schottky-barrier infrared detectors with 10- mu m cutoff wavelength , 1988, IEEE Electron Device Letters.

[13]  Rasit Turan,et al.  On the internal photoemission spectrum of PtSi/p-Si infrared detectors , 2002 .

[14]  Pierre Berini,et al.  Thin Au surface plasmon waveguide Schottky detectors on p-Si , 2012, Nanotechnology.

[15]  O. Bondarenko,et al.  High-speed limitations of the metal-semiconductor-metal photodiode structures with submicron gap between the interdigitated contacts , 2002 .

[16]  Hydrogenated amorphous silicon multi-SOI waveguide modulator with low voltage-length product , 2013 .

[17]  Guo-Qiang Lo,et al.  Waveguide-integrated near-infrared detector with self-assembled metal silicide nanoparticles embedded in a silicon p-n junction , 2012 .

[18]  Naomi J. Halas,et al.  Photodetection with Active Optical Antennas , 2011, Science.

[19]  B. Jalali,et al.  Demonstration of a Mid-infrared silicon Raman amplifier. , 2007, Optics express.

[20]  Krishna C. Saraswat,et al.  Leakage suppression by asymmetric area electrodes in metal-semiconductor-metal photodetectors , 2006 .

[21]  Pierre Berini,et al.  Thin-Film Schottky Barrier Photodetector Models , 2010, IEEE Journal of Quantum Electronics.

[22]  Ivo Rendina,et al.  Near-Infrared Sub-Bandgap All-Silicon Photodetectors: State of the Art and Perspectives , 2010, Sensors.

[23]  S. M. Sze,et al.  Current transport in metal-semiconductor-metal (MSM) structures , 1971 .

[24]  R. Soref,et al.  Large single-mode rib waveguides in GeSi-Si and Si-on-SiO/sub 2/ , 1991 .

[25]  M. Casalino,et al.  Near-Infrared Sub-Bandgap All-Silicon Photodetectors: A Review , 2012, OPTICS 2012.

[26]  G. Coppola,et al.  Near-Infrared All-Silicon Photodetectors , 2012 .

[27]  P. Berini,et al.  Subbandgap Asymmetric Surface Plasmon Waveguide Schottky Detectors on Silicon , 2013, IEEE Journal of Selected Topics in Quantum Electronics.

[28]  Guo-Qiang Lo,et al.  Near-infrared waveguide-based nickel silicide Schottky-barrier photodetector for optical communications , 2008 .

[29]  Joseph Shappir,et al.  Locally oxidized silicon surface-plasmon Schottky detector for telecom regime. , 2011, Nano letters.

[30]  G. Lo,et al.  Low-Cost and High-Speed SOI Waveguide-Based Silicide Schottky-Barrier MSM Photodetectors for Broadband Optical Communications , 2008, IEEE Photonics Technology Letters.

[31]  G. Coppola,et al.  Cavity Enhanced Internal Photoemission Effect in Silicon Photodiode for Sub-Bandgap Detection , 2010, Journal of Lightwave Technology.