Preparation of highly textured Mo and AlN films using a Ti seed layer for integrated high-Q film bulk acoustic resonators
暂无分享,去创建一个
Jong-Uk Bu | Hee-Chul Lee | Hee-Chul Lee | J. Bu | Jae-Young Park | Jae-Young Park | Kyung-Hak Lee | Kyung-Hak Lee
[1] D. W. Hoffman,et al. Internal stresses in Cr, Mo, Ta, and Pt films deposited by sputtering from a planar magnetron source , 1982 .
[2] Paul Muralt,et al. Stress and piezoelectric properties of aluminum nitride thin films deposited onto metal electrodes by pulsed direct current reactive sputtering , 2001 .
[3] R. Reif,et al. Electromechanical coupling constant extraction of thin-film piezoelectric materials using a bulk acoustic wave resonator , 1998, IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control.
[4] K. Yoon,et al. Growth of highly c-axis textured AlN films on Mo electrodes for film bulk acoustic wave resonators , 2003 .
[5] Kenneth Meade Lakin,et al. High-Q microwave acoustic resonators and filters , 1993 .
[6] K. Yoon,et al. Influence of electrode configurations on the quality factor and piezoelectric coupling constant of solidly mounted bulk acoustic wave resonators , 2002 .
[7] Y. Oshmyansky,et al. PCS 1900 MHz duplexer using thin film bulk acoustic resonators (FBARs) , 1999 .
[8] R. Reif,et al. Measurements of the bulk, C-axis electromechanical coupling constant as a function of AlN film quality , 2000, IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control.