Calibration of the Effective Tunneling Bandgap in GaAsSb/InGaAs for Improved TFET Performance Prediction

The effective bandgap for heterojunction band-to-band tunneling (E<sub>g,eff</sub>) is a crucial design parameter for a heterojunction tunneling FET (TFET). However, there is significant uncertainty on E<sub>g,eff</sub>, especially for In<sub>0.53</sub>Ga<sub>0.47</sub>As/GaAs<sub>0.5</sub>Sb<sub>0.5</sub>. This makes the prediction of TFET performance difficult. We calibrate E<sub>g,eff</sub> by fabricating heterojunction p+/i/n+ diodes, comparing the simulated and the measured current-voltage and capacitance-voltage curves, while taking E<sub>g,eff</sub> as a fitting parameter. Our calibration significantly reduces the uncertainty on E<sub>g,eff</sub> compared with the range found in the literature. The comparison with the previous work on highly doped heterojunction diodes suggests that dopant-dependent bandgap narrowing reduces E<sub>g,eff</sub> and therefore significantly impacts the performance of highly doped TFET.

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