文
论文分享
演练场
杂货铺
论文推荐
字
编辑器下载
登录
注册
On the 3C-SiC/SiO2 n-MOS interface and the creation of a calibrated model for the Electrons' Inversion Layer Mobility covering a wide range of operating temperatures and applied gate voltage
复制论文ID
分享
摘要
作者
参考文献
暂无分享,去
创建一个
P. Mawby
|
M. Antoniou
|
M. Jennings
|
N. Lophitis
|
A. Arvanitopoulos
保存到论文桶