Thermal decomposition of silicon-rich oxides deposited by the LPCVD method

Silicon-rich oxide (SiO<inf>x</inf>, 0<x<2) thin films were deposited using the Low Pressure Chemical Vapor Deposition (LPCVD) method at temperature of 570 °C using silane (SiH<inf>4</inf>) and oxygen as the reactant gasses. The films were annealed at temperatures of 800 °C, 900 °C, 1000 °C and 1100 °C to induce the separation of excess silicon in the SiO<inf>x</inf> films into nanosized crystalline silicon particles inside an amorphous SiO<inf>x</inf> matrix. The size of the silicon particles was determined using Raman spectroscopy.

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