论文信息 - Drain-voltage dependence of IGFET turn-on voltage

Drain-voltage dependence of IGFET turn-on voltage

Abstract The turn-on voltage (or threshold voltage) characteristic of an enhancement-type insulated-gate field-effect transistor (IGFET) in its pentode operation region, is analyzed based on a simple model. A new definition for the turn-on voltage at just-saturated state is given and a new simple formula for the turn-on voltage shift in IGFETs pentode operation region, is deduced. This assumes a reduction of gate-induced bulk charge under the influence of the drain voltage. Agreement of the theory with experiment is good.

Luong Mo Dang

[1] L. D. Yau,et al. A simple theory to predict the threshold voltage of short-channel IGFET's , 1974 .

[2] L. M. Dang. A one-dimensional theory on the effects of diffusion current and carrier velocity saturation on E-type IGFET current-voltage characteristics , 1977 .

[3] D. P. Kennedy,et al. Steady state mathematical theory for the insulated gate field effect transistor , 1973 .

[4] A. A. Maradudin,et al. Tables of Higher Functions , 1960 .

[5] H. S. Lee. An analysis of the threshold voltage for short-channel IGFET's , 1973 .

[6] H. Grubin. The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.