Properties of Si nanowire devices fabricated by using an inorganic EB resist process

Abstract We have investigated properties of Si nanowire devices fabricated by using an inorganic SiO 2 electron beam (EB) resist. The inorganic EB resist process technique has been successfully applied to the fabrication of a Si nanowire of less than 15 nm width for the first time. In the fabricated 15 nm wide Si nanowire device with a Si nanodot, we have observed a superior single-electron memory behavior, i.e. a very large threshold voltage shift ( ΔV th.step ) of 0.72 V and a relatively low write voltage step ( ΔV w.step ) of 3 V at 13 K, due to the very narrow Si nanowire and quite small Si nanodot. We have also obtained the few-electron memory operation in the Si nanowire device at room temperature. Furthermore, in the other 5–10 nm wide Si nanowire device, we have confirmed the very large Coulomb blockade effect in the electrical characteristics at 13 K. It is confirmed from the experimental results that the inorganic EB resist process is promising for the fabrication of various Si nanodevices.