Properties of titanium oxide films obtained by PECVD

Abstract Amorphous TiO 2 films containing carbon and excess oxygen were deposited from glow discharge plasmas of titanium tetraisopropoxide Ti(OC 3 H 7 ) 4 , helium, oxygen and argon mixtures. The discharge was generated in a stainless steel vacuum chamber by two parallel-plate electrodes connected to a 13.56 MHz power supply. A substrate holder, to which a d.c. bias voltage could be applied, was positioned outside the region between the two electrodes, i.e. in a region of lower plasma density. The substrate voltage bias, V B , and the ratio of the partial pressures of O 2 to Ti(OC 3 H 7 ) 4 [oxygen to precursor (OTP) ratio] in the chamber were adopted as the principal deposition parameters. Details of the molecular structure of the films were investigated by infrared spectroscopy and X-ray photoelectron spectroscopy. The latter was also used to determine the O/Ti and C/Ti atomic ratios at the film surface. The total (surface and bulk) O/Ti and C/Ti atomic ratios were determined using Rutherford backscattering spectroscopy. While neither the surface nor the total O/Ti ratio varied significantly with V B and the OTP ratio, both the surface and total C/Ti ratios varied strongly with these parameters. The refractive index, determined by ultraviolet-visible spectroscopy, and the electrical conductivity, measured by a two-point probe, were influenced by the polarity and magnitude of V B .

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