Microwave irradiation effects on random telegraph signal in a MOSFET
暂无分享,去创建一个
Alessandro Calderoni | Giorgio Ferrari | Marco Sampietro | Marco Fanciulli | Enrico Prati | G. Ferrari | M. Sampietro | M. Fanciulli | A. Calderoni | E. Prati
[1] E. Simoen,et al. Random Telegraph Signal: a local probe for single point defect studies in solid-state devices , 2002 .
[2] K. Kandiah,et al. A physical model for random telegraph signal currents in semiconductor devices , 1989 .
[3] G. Ferrari,et al. Effect of the triplet state on the random telegraph signal in Si n-MOSFETs , 2005, cond-mat/0512692.
[4] Eli Yablonovitch,et al. Electron-spin-resonance transistors for quantum computing in silicon-germanium heterostructures , 1999, quant-ph/9905096.
[5] J. A. López-Villanueva,et al. Quantum two-dimensional calculation of time constants of random telegraph signals in metal-oxide-semiconductor structures , 1997 .
[6] S. Machlup,et al. Noise in Semiconductors: Spectrum of a Two‐Parameter Random Signal , 1954 .
[7] G. Ferrari,et al. dc modulation in field-effect transistors operating under microwave irradiation for quantum readout , 2005 .
[8] Michael J. Uren,et al. 1/f and random telegraph noise in silicon metal‐oxide‐semiconductor field‐effect transistors , 1985 .
[9] R. Howard,et al. Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency ( 1 f ?) Noise , 1984 .
[10] E. Yablonovitch,et al. Electrical detection of the spin resonance of a single electron in a silicon field-effect transistor , 2004, Nature.
[11] I. Martin,et al. A scheme for electrical detection of single-electron spin resonance. , 2003, Physical review letters.
[12] E. Klumperink,et al. Modeling random telegraph noise under switched bias conditions using cyclostationary RTS noise , 2003 .