Chapter 4 OMVPE Growth of AlGalnP for High-Efficiency Visible Light-Emitting Diodes

Publisher Summary This chapter describes the organometallic vaporphase epitaxy (OMVPE) growth of Aluminium gallium indium phosphide (AlGaInP) for high-efficiency LED applications. First, a broad overview of growth conditions and the requirements for growth of high-quality optoelectronic devices is provided. The properties of the epilayer depend strongly on the growth conditions as well as the ability to control background impurity incorporation, especially oxygen. Inability to effectively minimize oxygen contamination in the manufacture AlGaInP LEDs can result in poor reproducibility due to variation in source purity and other factors. The production yield for these AlGaInP LEDs is expected to increase each year as manufacturers continue to improve the growth process and increase the productivity of the OMVPE reactors. The chapter focuses on a variety of issues that are central to the growth process. These include n- and p-type doping, ordering effects, unintentional hydrogen passivation, and residual oxygen incorporation. A variety of manufacturing issues, such as uniformity, run-to-run reproducibility, and safety are also discussed.

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