Anomalous effects on the current‐voltage characteristics of p‐channel metal‐oxide‐semiconductor transistors in the temperature range 4.2–50 K

The current‐voltage characteristics of p‐channel MOSFETs (metal‐oxide‐semiconductor field‐effect transistors) in the temperature range 4.2‐50 K have been investigated in detail. A peak is observed at the beginning of the drain‐current–drain‐voltage (Id, Vd) curves for low Vg values, which is not observed in the case of n‐channel MOSFETs and is found to be a very slow transient effect. This time‐dependent peak is observed for temperatures below ∼25 K and for channel lengths greater than ∼3 μm. In this temperature range a strong hysteresis effect is also observed at low Vg voltages. The above behavior will be explained in terms of a very slow depletion layer formation in the drain region, introduced by the large time constant of the field‐assisted thermal emission of carriers in n‐type bulk semiconductors at temperatures below ∼20 K. Another effect, analogous to the ‘‘kink effect’’ observed in n‐channel MOSFETs at temperatures below 16 K, is also observed for low Vg and Vd values. This effect is observed wi...

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