An analytical model for the non-quasi-static small-signal behaviour of submicron MOSFETs

Abstract A new, analytical Non-Quasi-Static model, in terms of admittance parameters, for the small-signal behaviour of short channel MOSFETs is presented. The relevant short channel effects are included explicitly in the derivation of the model. The effects of approximating the exact analytical solutions are discussed. A new approximation for extremely high frequencies is proposed. The model is consistent with previously published low frequency models and shows good agreement with 2D device simulations and measurements. Finally the influence of parasitics is illustrated.

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