论文信息 - Influence of trap states on dynamic properties of single grain silicon thin film transistors

Influence of trap states on dynamic properties of single grain silicon thin film transistors

The transient properties of single grain–thin film transistors (SG-TFTs) with high electron mobility have been studied. Overshoot current induced by trap states has been observed in most of the devices. A method of ac measurements has been used to investigate the trap processes. Both transient and ac measurements show that the response of some SG-TFTs with high field effect mobility is dominated by a single trap level. Bias stressing on SG-TFT can induce more trap states and thus change the ac response of the device.

Ryoichi Ishihara | Piero Migliorato | Feng Yan

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