ESD time-domain characterization of high-k gate dielectric in a 32 nm CMOS technology
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Souvick Mitra | Robert Gauthier | Elyse Rosenbaum | Yang Yang | Christian Russ | Adrien Ille | James Di Sarro | Kiran Chatty | Junjun Li | E. Rosenbaum | Junjun Li | K. Chatty | R. Gauthier | C. Russ | D. Ioannou | A. Ille | S. Mitra | J. di Sarro | Yang Yang | Dimitris Ioannou
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