Control of vacancy-type defects in Mg implanted GaN studied by positron annihilation spectroscopy
暂无分享,去创建一个
Shigefusa F. Chichibu | Shoji Ishibashi | Marcel Dickmann | Akira Uedono | Werner Egger | Christoph Hugenschmidt | A. Uedono | S. Chichibu | S. Ishibashi | M. Dickmann | C. Hugenschmidt | W. Egger
[1] A. Uedono,et al. Vacancy‐type defects and their annealing behaviors in Mg‐implanted GaN studied by a monoenergetic positron beam , 2015 .
[2] O. Mogensen,et al. Program system for analysing positron lifetime spectra and angular correlation curves , 1984 .
[3] Takashi Mukai,et al. Study of defects in GaN grown by the two-flow metalorganic chemical vapor deposition technique using monoenergetic positron beams , 2001 .
[4] Filip Tuomisto,et al. Defect identification in semiconductors with positron annihilation: Experiment and theory , 2013 .
[5] C. Walle,et al. First-principles calculations for defects and impurities: Applications to III-nitrides , 2004 .
[6] A. Janotti,et al. Shallow versus deep nature of Mg acceptors in nitride semiconductors. , 2012, Physical review letters.
[7] Stephen J. Pearton,et al. Ion implantation into GaN , 2001 .
[8] David C. Look,et al. Thermal Stability of Isolated and Complexed Ga Vacancies in GaN Bulk Crystals , 2001 .
[9] M. Manfredi,et al. POSITRON ANNIHILATION IN SEMICONDUCTORS. , 1968 .
[10] A. Uedono,et al. Annealing Behavior of Vacancy‐Type Defects in Mg‐ and H‐Implanted GaN Studied Using Monoenergetic Positron Beams , 2019, physica status solidi (b).
[11] A. Uedono,et al. Carrier Trapping by Vacancy‐Type Defects in Mg‐Implanted GaN Studied Using Monoenergetic Positron Beams , 2018 .
[12] B. Jayant Baliga,et al. Gallium nitride devices for power electronic applications , 2013 .
[13] A. C. Kruseman,et al. VEPFIT applied to depth profiling problems , 1995 .
[14] A. Uedono,et al. First-principles calculation of positron states and annihilation parameters for group-III nitrides , 2014 .
[15] Alex Q. Huang,et al. The 2018 GaN power electronics roadmap , 2018, Journal of Physics D: Applied Physics.
[16] A. Uedono,et al. Vacancy-type defects introduced by plastic deformation of GaN studied using monoenergetic positron beams , 2013 .
[17] Blöchl,et al. Projector augmented-wave method. , 1994, Physical review. B, Condensed matter.
[18] C. Hugenschmidt,et al. Status of the pulsed low energy positron beam system (PLEPS) at the Munich Research Reactor FRM-II , 2008 .
[19] R. Elliman,et al. Advances in ion beam modification of semiconductors , 2015 .