On the MOVPE growth and luminescence properties of GaAs-AlGaAs core-multishell nanowire quantum structures

We report on the growth of GaAs-AlGaAs core-multishell nanowire quantum heterostructures by metalorganic vapor phase epitaxy, and their photoluminescence (PL) properties. Dense arrays of vertically-aligned GaAs nanowires were fabricated onto (111)B-GaAs wafers by Au-catalyzed self-assembly, and radially overgrown by two AlGaAs shells between which a few-nm thin GaAs shell was introduced to form a quantum well tube (QWT). Besides the GaAs nanowire core emission band peaked at around 1.503 eV, 7K PL spectra showed an additional broad peak in the 1.556- 1.583 eV energy interval, ascribed to the transition between electron and hole confined states within the QWT. The emission blue-shifts with the shrinkage of as-grown GaAs well tubes, as the nanowire local (on the substrate) density and height change.

[1]  P. Krogstrup,et al.  Single-nanowire solar cells beyond the Shockley-Queisser limit , 2013, 1301.1068.

[2]  Oren D. Leaffer,et al.  Tunable hot-electron transfer within a single core-shell nanowire. , 2011, Physical review letters.

[3]  K. Dick,et al.  Wurtzite–zincblende superlattices in InAs nanowires using a supply interruption method , 2011, Nanotechnology.

[4]  W. Richter,et al.  GaAs nanowires grown by Au-catalyst-assisted MOVPE using tertiarybutylarsine as group-V precursor , 2007 .

[5]  P. Prete,et al.  Mass-transport driven growth dynamics of AlGaAs shells deposited around dense GaAs nanowires by metalorganic vapor phase epitaxy , 2015 .

[6]  L. Lauhon,et al.  Demonstration of Confined Electron Gas and Steep-Slope Behavior in Delta-Doped GaAs-AlGaAs Core-Shell Nanowire Transistors. , 2015, Nano letters.

[7]  Kenji Hiruma,et al.  GaAs/AlGaAs core multishell nanowire-based light-emitting diodes on Si. , 2010, Nano letters.

[8]  Shadi A Dayeh,et al.  High electron mobility InAs nanowire field-effect transistors. , 2007, Small.

[9]  A. Bertoni,et al.  High mobility one- and two-dimensional electron systems in nanowire-based quantum heterostructures. , 2013, Nano letters.

[10]  G. Abstreiter,et al.  Lasing from individual GaAs-AlGaAs core-shell nanowires up to room temperature , 2013, Nature Communications.

[11]  P. Prete,et al.  Built‐in elastic strain and localization effects on GaAs luminescence of MOVPE‐grown GaAs–AlGaAs core–shell nanowires , 2013 .

[12]  L. Lazzarini,et al.  Luminescence of GaAs/AlGaAs core–shell nanowires grown by MOVPE using tertiarybutylarsine , 2008 .

[13]  Bryan M. Wong,et al.  Optical, structural, and numerical investigations of GaAs/AlGaAs core-multishell nanowire quantum well tubes. , 2013, Nano letters.

[14]  T. Fukui,et al.  A III–V nanowire channel on silicon for high-performance vertical transistors , 2012, Nature.

[15]  Chennupati Jagadish,et al.  Emergence of localized states in narrow GaAs/AlGaAs nanowire quantum well tubes. , 2015, Nano letters.

[16]  F. Dimroth,et al.  InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit , 2013, Science.