论文信息 - DMOS experimental and theoretical study

DMOS experimental and theoretical study

An experimental and theoretical investigation of DMOS transistors with widely varying substrate doping and channel lengths has been performed. A simple two-transistor model, which includes velocity saturation was used to give insight into the physics of DMOS devices. A more complete model will be presented.

[1] G. D. Vendelin,et al. D-MOS transistor for microwave applications , 1972 .

[2] J. L. Moll,et al. Design theory of a surface field-effect transistor , 1961 .

[3] M. Declercq,et al. Avalanche breakdown in high-voltage D-MOS devices , 1976, IEEE Transactions on Electron Devices.

[4] G. Warfield,et al. Carrier mobility and current saturation in the MOS transistor , 1965 .

[5] Yutaka Hayashi,et al. Diffusion Selfaligned MOST; A New Approach for High Speed Device , 1969 .

[6] J. Meindl,et al. VMOS: high speed TTL compatible MOS logic , 1974 .