Distributed electro-thermal model of IGBT chip - Application to top-metal ageing effects in short circuit conditions

Abstract A new distributed electro-thermal model has been developed in order to analyze electrical and thermal mappings of power devices during critical operations. The model is based on dividing power device into a vertical multilayer structure, with each layer discretized into multiple slab volumes. This model has been used to evaluate the effects of chip metallization ageing on temperature distributions and current sharing between cells within an IGBT chip during short-circuits operations. Dynamic latch-up failures during short-circuit operations has been investigated.

[1]  A. Irace,et al.  Compact electro-thermal modeling and simulation of large area multicellular Trench-IGBT , 2010, 2010 27th International Conference on Microelectronics Proceedings.

[2]  Paolo Maffezzoni,et al.  Compact modeling of electrical devices for electrothermal analysis , 2003 .

[3]  S. Lefebvre,et al.  Experimental investigations of trench field stop IGBT under repetitive short-circuits operations , 2008, 2008 IEEE Power Electronics Specialists Conference.

[4]  S. Lefebvre,et al.  Experimental behavior of single-chip IGBT and COOLMOS devices under repetitive short-circuit conditions , 2005, IEEE Transactions on Electron Devices.

[5]  P. Tounsi,et al.  A temperature-dependent power MOSFET model for switching application , 2009, 2009 15th International Workshop on Thermal Investigations of ICs and Systems.

[6]  Andrea Irace,et al.  New developments of THERMOS3, a tool for 3D electro-thermal simulation of smart power MOSFETs , 2007, Microelectron. Reliab..

[7]  A. Benmansour,et al.  A step by step methodology to analyze the IGBT failure mechanisms under short circuit and turn-off inductive conditions using 2D physically based device simulation , 2007, Microelectron. Reliab..

[8]  H. Morel,et al.  VHDL-AMS model of IGBT for electro-thermal simulation , 2007, 2007 European Conference on Power Electronics and Applications.

[9]  Krishna Shenai,et al.  Electrothermal simulations in punchthrough and nonpunchthrough IGBT's , 1998 .

[10]  Allen R. Hefner,et al.  A dynamic electro-thermal model for the IGBT , 1992, Conference Record of the 1992 IEEE Industry Applications Society Annual Meeting.