Robust circuit and system design methodologies for nanometer-scale devices and single-electron transistors

This paper addresses the functional robustness and fault-tolerance capability of very-deep submicron CMOS and single-electron transistor (SET) circuits. A set of guidelines is identified for the design of very high-density digital systems using inherently unreliable and error-prone devices. Empirical results based on SPICE simulations show that the proposed design method improves fault immunity at transistor level. Graceful degradation of circuit performance allows recovery of information, where classical circuits would fail.

[1]  A.M. Ionescu,et al.  A quasi-analytical SET model for few electron circuit simulation , 2002, IEEE Electron Device Letters.

[2]  S. Folling,et al.  Single-electron latching switches as nanoscale synapses , 2001, IJCNN'01. International Joint Conference on Neural Networks. Proceedings (Cat. No.01CH37222).

[3]  André DeHon,et al.  Array-based architecture for FET-based, nanoscale electronics , 2003 .

[4]  Stamatis Vassiliadis,et al.  A linear threshold gate implementation in single electron technology , 2001, Proceedings IEEE Computer Society Workshop on VLSI 2001. Emerging Technologies for VLSI Systems.

[5]  Jaap Hoekstra,et al.  Programmable logic using a SET electron box , 2001, ICECS 2001. 8th IEEE International Conference on Electronics, Circuits and Systems (Cat. No.01EX483).

[6]  Hiroshi Inokawa,et al.  Silicon single-electron devices and their applications , 2004 .

[7]  C. Wasshuber Computational Single-Electronics , 2001 .

[8]  Sorin Cotofana,et al.  Achieving fanout capabilities in single electron encoded logic networks , 2001, 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443).

[9]  Kaustav Banerjee,et al.  SET-based quantiser circuit for digital communications , 2002 .

[10]  Yoshihito Amemiya,et al.  Single-Electron Logic Systems Based on the Binary Decision Diagram , 1998 .

[11]  Konstantin K. Likharev,et al.  Single-electron devices and their applications , 1999, Proc. IEEE.

[12]  Jaap Hoekstra,et al.  Design philosophy for nanoelectronic systems, from SETs to neural nets , 2000 .

[13]  M. Forshaw,et al.  Architectures for reliable computing with unreliable nanodevices , 2001, Proceedings of the 2001 1st IEEE Conference on Nanotechnology. IEEE-NANO 2001 (Cat. No.01EX516).

[14]  Kaustav Banerjee,et al.  Few electron devices: towards hybrid CMOS-SET integrated circuits , 2002, DAC '02.

[15]  C.J.M. Verhoeven,et al.  Single electron tunneling technology for neural networks , 1996, Proceedings of Fifth International Conference on Microelectronics for Neural Networks.

[16]  Kenji Taniguchi,et al.  Asymmetric Single Electron Turnstile and Its Electronic Circuit Applications , 1998 .

[17]  John R. Tucker,et al.  Complementary digital logic based on the ``Coulomb blockade'' , 1992 .

[18]  C. Pacha,et al.  Aspects of systems and circuits for nanoelectronics , 1997, Proc. IEEE.

[19]  Scott Hamilton Semiconductor Research Corporation: Taking Moore's Law Into the Next Century , 1999, Computer.

[20]  H. Inokawa,et al.  A multiple-valued logic with merged single-electron and MOS transistors , 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

[21]  Kenji Taniguchi,et al.  Monte Carlo Study of Single-Electronic Devices , 1994 .

[22]  H. Inokawa,et al.  A multiple-valued SRAM with combined single-electron and MOS transistors , 2001, Device Research Conference. Conference Digest (Cat. No.01TH8561).