An analytical model for LDD drain structures

An approximate analytical model for short-channel IGFET (isolated-gate field-effect transistor) LDD structures in saturation is developed from a quasi-two-dimensional analysis under the assumption of a nonvanishing field derivative at the pinchoff point. The differences between this model and existing model are compared. It is suggested that the model is useful in determining the location of the pinchoff point, whereby the effect of channel-length modulation can be assessed. >