论文信息 - Fabrication of HfSiON gate dielectrics by plasma oxidation and nitridation, optimized for 65 nm mode low power CMOS applications - 字舞流文

Fabrication of HfSiON gate dielectrics by plasma oxidation and nitridation, optimized for 65 nm mode low power CMOS applications

Y. Tsunashima | M. Takayanagi | M. Sato | A. Kaneko | K. Eguchi | T. Watanabe | H. Fukui | S. Inumiya | Y. Kamata | K. Sekine | M. Koyama | A. Nishiyama | Takeshi Watanabe | S. Niwa | Kazuhiro Eguchi | Shoko Niwa | Motoyuki Sato | Hironobu Fukui | Yoshiki Kamata | Masato Koyama | Akira Nishiyama | Mariko Takayanagi | Yoshitaka Tsunashima