Advanced 300mm 0.13μm BCD technology from 5V to 80V with highly reliable embedded Flash

This paper demonstrates the advanced 300mm 0.13μm BCD platform with high flexibility. This platform brings about the various combinations from ten kinds of device options and three kinds of wiring options. Especially, for DMOS which plays an important role on the BCD platform, the best in class low Rdson is realized on Si-bulk. Furthermore, the highly reliable Flash memory cell is embedded on the 0.13μm BCD platform. This cell shows the excellent retention reliability of more than 20 years under 150°C after 100K erase/write cycles can be estimated.

[1]  F. Alagi,et al.  BCD8sP: An advanced 0.16 μm technology platform with state of the art power devices , 2013, 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

[2]  Pete Rodriquez,et al.  Approach to the silicon limit: Advanced NLDMOS in 0.13 μm SOI technology for automotive and industrial applications up to 110V , 2013, 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

[3]  K. Kobayashi,et al.  A fast rewritable 90nm 512Mb NOR “B4-Flash” memory with 8F2 cell size , 2011, 2011 Symposium on VLSI Circuits - Digest of Technical Papers.

[4]  Min-Hwan Kim,et al.  Advanced 0.13um smart power technology from 7V to 70V , 2012, 2012 24th International Symposium on Power Semiconductor Devices and ICs.

[5]  C. Contiero,et al.  BCD8 from 7V to 70V: a new 0.l8μm Technology Platform to Address the Evolution of Applications towards Smart Power ICs with High Logic Contents , 2007, Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's.

[6]  T. Endoh,et al.  A 60nm NOR Flash Memory Cell Technology Utilizing Back Bias Assisted Band-to-Band Tunneling Induced Hot-Electron Injection (B4-Flash) , 2006, 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..

[7]  Mi-Young Kim,et al.  BD180 - a new 0.18 μm BCD (Bipolar-CMOS-DMOS) Technology from 7V to 60V , 2008, 2008 20th International Symposium on Power Semiconductor Devices and IC's.