论文信息 - 5GHz-band CMOS class-E power amplifier module considering wire bonding

5GHz-band CMOS class-E power amplifier module considering wire bonding

This paper presents a high-efficient 0.18μm CMOS class-E power amplifier (PA) for 5GHz wireless transmitter applications using constant envelope modulation scheme. The proposed class-E PA employs injection-locking technique to reduce required input power. This PA was placed on the lead frame and molded in the packaging for transmitter application. In our design, bonding wires are optimized by using EM simulation. And the coplanar waveguide structure in the RF port was composed of bonding wires. Our PA module is composed of PA in package, PCB, DC cable and SMA connectors. This PA module has a measured PAE = 41.0 %.

Haruichi Kanaya

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