Two color InAs/InGaAs dots-in-a-well detector with background-limited performance at 91 K

Normal incidence long wave infrared (λc∼9 μm) InAs/In0.15Ga0.85As dots-in-a-well detectors with background limited performance at 91 K, under f#1.7 300 K background irradiance, are reported. Two distinct peaks (λp1∼4.2 μm and λp2∼7.6 μm) are observed in the spectral response, which could possibly be due to a bound-to-continuum transition and a bound-to-bound transition, respectively. The operating wavelength of the detector can be varied by changing the width of the quantum well surrounding the quantum dots. Using calibrated blackbody measurements, the peak responsivity of the detector is measured to be 0.73 A/W (Vb=−1.7 V at T=60 K).

[1]  Andreas Stintz,et al.  Characterization of InAs quantum dots in strained InxGa1-xAs quantum wells , 2000 .

[2]  Sanjay Krishna,et al.  High-detectivity, normal-incidence, mid-infrared (λ∼4 μm)InAs/GaAs quantum-dot detector operating at 150 K , 2001 .

[3]  G. Bastard,et al.  Phonon scattering and energy relaxation in two-, one-, and zero-dimensional electron gases. , 1990, Physical review. B, Condensed matter.

[4]  Hooman Mohseni,et al.  Growth and characterization of InGaAs/InGaP quantum dots for midinfrared photoconductive detector , 1998 .

[5]  M. Segev,et al.  Mid-infrared photoconductivity in InAs quantum dots , 1997 .

[6]  Yozo Shimada,et al.  Bound-to-continuum intersubband photoconductivity of self-assembled InAs quantum dots in modulation-doped heterostructures , 1999 .

[7]  Elias Towe,et al.  NORMAL-INCIDENCE INTERSUBBAND (IN, GA)AS/GAAS QUANTUM DOT INFRARED PHOTODETECTORS , 1998 .

[8]  B. F. Levine,et al.  Quantum‐well infrared photodetectors , 1993 .

[9]  E. Finkman,et al.  Midinfrared photoconductivity of Ge/Si self-assembled quantum dots , 2000 .

[10]  Ludmila Eckertova,et al.  Physics of thin films , 1977 .

[11]  Jamie D. Phillips,et al.  Self-assembled InAs-GaAs quantum-dot intersubband detectors , 1999 .

[12]  E. Dereniak,et al.  Infrared Detectors and Systems , 1996 .

[13]  Andreas Stintz,et al.  High-responsivity, normal-incidence long-wave infrared (λ∼7.2 μm) InAs/In0.15Ga0.85As dots-in-a-well detector , 2002 .

[14]  P. Petroff,et al.  Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectors , 1998 .

[15]  Gerhard Abstreiter,et al.  Normal-incident intersubband photocurrent spectroscopy on InAs/GaAs quantum dots , 1999 .

[16]  A. Madhukar,et al.  Selective manipulation of InAs quantum dot electronic states using a lateral potential confinement layer , 2002 .

[17]  Benisty,et al.  Intrinsic mechanism for the poor luminescence properties of quantum-box systems. , 1991, Physical review. B, Condensed matter.

[18]  Magnus Willander,et al.  On the detectivity of quantum-dot infrared photodetectors , 2001 .

[19]  A. Madhukar,et al.  Tailoring detection bands of InAs quantum-dot infrared photodetectors using InxGa1−xAs strain-relieving quantum wells , 2001 .