Effects of thermal and hydrogen treatment on indium segregation in InGaN/GaN multiple quantum wells

The effects of indium segregation and hydrogen on the optical and structural properties of InGaN/GaN multiple quantum wells, grown by metalorganic chemical vapor deposition were investigated. Photoluminescence and high-resolution transmission electron microscopy analysis showed that two types of indium-rich regions can be formed in the InGaN well layers. Self-assembled quantum dot-like indium-rich regions were found in the well layer grown at a normal growth temperature. These regions behaved as luminescent centers, showing a maximum indium content at the center of indium-rich region. However, randomly-distributed indium-segregated regions, which formed near the upper interface of the InGaN well layers during the subsequent high-temperature annealing process led to the degradation of the optical properties by generating defects such as misfit dislocations. The use of hydrogen during the growth interruption was found to be very effective in suppressing the formation of indium-segregated regions in the InGaN well layers.

[1]  Shuji Nakamura,et al.  The Blue Laser Diode: GaN based Light Emitters and Lasers , 1997 .

[2]  Robert W. Martin,et al.  Origin of Luminescence from InGaN Diodes , 1999 .

[3]  L. Romano,et al.  Phase Separation in InGaN/GaN Multiple Quantum Wells , 1998 .

[4]  T. Matsuoka,et al.  Wide-gap semiconductor InGaN and InGaAln grown by MOVPE , 1992 .

[5]  F. Steuber,et al.  Low pressure MOVPE of GaN and GaInN/GaN heterostructures , 1997 .

[6]  J. Bläsing,et al.  Indium nanowires in thick (InGaN) layers as determined by x-ray analysis , 2000 .

[7]  P. Ryder,et al.  INCORPORATION OF INDIUM DURING MOLECULAR BEAM EPITAXY OF INGAN , 1998 .

[8]  Tao Yang,et al.  Increased Size of Open Hexagonally Shaped Pits due to Growth Interruption and Its Influence on InGaN/GaN Quantum-Well Structures Grown by Metalorganic Vapor Phase Epitaxy , 1998 .

[9]  Characterization of MOVPE-grown (Al, In, Ga) N heterostructures by quantitative analytical electron microscopy , 1997 .

[10]  Shuji Nakamura,et al.  Atomic Scale Indium Distribution in a GaN/In0.43Ga0.57N/Al0.1Ga0.9N Quantum Well Structure , 1997 .

[11]  Masaya Shimizu,et al.  MOVPE growth of thick homogeneous InGaN directly on sapphire substrate using AlN buffer layer , 1997 .

[12]  F. Ponce,et al.  Microstructure of InGaN Quantum Wells , 1997 .

[13]  J. Massies,et al.  GaInN GaN multiple-quantum-well light-emitting diodes grown by molecular beam epitaxy , 1999 .

[14]  Weber,et al.  Interface segregation and clustering in strained-layer InGaAs/GaAs heterostructures studied by cross-sectional scanning tunneling microscopy. , 1994, Physical review letters.

[15]  P. P. González-Borrero,et al.  Influence of surface structure on segregation and alloy properties in (100)- and (311)-oriented InGaAsGaAs heterostructures , 1996 .

[16]  Yotaro Murakami,et al.  Preparation and optical properties of Ga1−xInxN thin films , 1975 .

[17]  K. Evans,et al.  Improved compositional abruptness at the InGaAs on GaAs interface by presaturation with In during molecular‐beam epitaxy , 1995 .

[18]  Shuji Nakamura,et al.  Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm , 1997 .

[19]  Shuji Nakamura,et al.  Luminescences from localized states in InGaN epilayers , 1997 .

[20]  Sidney Perkowitz,et al.  Optical characterization of semiconductors : infrared, raman, and photoluminescence spectroscopy , 1993 .

[21]  Umesh K. Mishra,et al.  Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour deposition , 1997 .

[22]  Michael Kneissl,et al.  Phase separation in InGaN multiple quantum wells annealed at high nitrogen pressures , 1999 .

[23]  Gerald B. Stringfellow,et al.  Solid phase immiscibility in GaInN , 1996 .

[24]  C. Adelmann,et al.  Indium incorporation during the growth of InGaN by molecular-beam epitaxy studied by reflection high-energy electron diffraction intensity oscillations , 1999 .

[25]  J. Im,et al.  GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy , 1997 .

[26]  N. El-Masry,et al.  Phase separation in InGaN grown by metalorganic chemical vapor deposition , 1998 .

[27]  P. Demeester,et al.  High Indium content InGaN films and quantum wells , 1997 .

[28]  Theodore D. Moustakas,et al.  Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition , 1997 .

[29]  Isamu Akasaki,et al.  Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters , 1997 .

[30]  David P. Bour,et al.  PHASE SEPARATION IN InGaN/GaN MULTIPLE QUANTUM WELLS , 1998 .