Correlated Topological Electronic States and Surface Magnetic Orderings in Layered MnBi2Te4
暂无分享,去创建一个
F. Zheng | Yuefei Hou | M. Pan | Y. Ou | Ping Zhang | Zhibin Shao | Shaojian Li | Q. Bian | Wen-liang Zhu | Ruiying Song | Xin Li | Yuan Cao | R. Zhai
[1] T. Okuda,et al. Nature of the Dirac gap modulation and surface magnetic interaction in axion antiferromagnetic topological insulator \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setl , 2020, Scientific Reports.
[2] J. Ying,et al. Mapping Dirac fermions in the intrinsic antiferromagnetic topological insulators (MnBi2Te4)(Bi2Te3)n ( n=0,1 ) , 2020, 2001.00866.
[3] Yong Xu,et al. Electronic states and magnetic response of MnBi2Te4 by scanning tunneling microscopy and spectroscopy. , 2020, Nano letters.
[4] H. Xiang,et al. Van der Waals engineering of magnetism , 2019, Nature Materials.
[5] X. H. Chen,et al. Magnetic and transport properties in the magnetic topological insulators MnBi2Te4(Bi2Te3)n ( n=1,2 ) , 2019, Physical Review B.
[6] Jiaqiang Yan,et al. Magnetic imaging of antiferromagnetic domain walls , 2019 .
[7] Jing Pei,et al. A New Opportunity for 2D van der Waals Heterostructures: Making Steep‐Slope Transistors , 2019, Advanced materials.
[8] Yong Xu,et al. High-Chern-number and high-temperature quantum Hall effect without Landau levels , 2019, National science review.
[9] C. Chen,et al. Topological Electronic Structure and Its Temperature Evolution in Antiferromagnetic Topological Insulator MnBi2Te4 , 2019, Physical Review X.
[10] Yuan Wang,et al. Gapless Surface Dirac Cone in Antiferromagnetic Topological Insulator MnBi2Te4 , 2019, Physical Review X.
[11] Eun Mi Kim,et al. Multiferroicity in atomic van der Waals heterostructures , 2019, Nature Communications.
[12] Baigeng Wang,et al. Experimental observation of the gate-controlled reversal of the anomalous Hall effect in the intrinsic magnetic topological insulator MnBi2Te4 device. , 2019, Nano letters.
[13] Yong Xu,et al. Robust axion insulator and Chern insulator phases in a two-dimensional antiferromagnetic topological insulator , 2019, Nature Materials.
[14] Chong Wang,et al. Magnetically controllable topological quantum phase transitions in the antiferromagnetic topological insulator MnBi2Te4 , 2019, Physical Review B.
[15] Y. Yu,et al. Quantum anomalous Hall effect in intrinsic magnetic topological insulator MnBi2Te4 , 2019, Science.
[16] Xianhui Chen,et al. Transport properties of thin flakes of the antiferromagnetic topological insulator MnBi2Te4 , 2019, Physical Review B.
[17] Efthimios Kaxiras,et al. Author Correction: Enhancement of interlayer exchange in an ultrathin two-dimensional magnet , 2019, Nature Physics.
[18] Q. Zhang,et al. Crystal growth and magnetic structure of MnBi2Te4 , 2019, Physical Review Materials.
[19] Xiang Zhang,et al. Two-dimensional magnetic crystals and emergent heterostructure devices , 2019, Science.
[20] K. Nielsch,et al. Chemical Aspects of the Candidate Antiferromagnetic Topological Insulator MnBi2Te4 , 2018, Chemistry of Materials.
[21] Yu Wang,et al. Spin scattering and noncollinear spin structure-induced intrinsic anomalous Hall effect in antiferromagnetic topological insulator MnBi2Te4 , 2018, Physical Review Research.
[22] A. Arnau,et al. Unique Thickness-Dependent Properties of the van der Waals Interlayer Antiferromagnet MnBi_{2}Te_{4} Films. , 2018, Physical review letters.
[23] E. Chulkov,et al. New Universal Type of Interface in the Magnetic Insulator/Topological Insulator Heterostructures. , 2018, Nano letters.
[24] Yang Peng,et al. Proximity-induced Majorana hinge modes in antiferromagnetic topological insulators , 2018, Physical Review B.
[25] Qinghua Zhang,et al. Experimental Realization of an Intrinsic Magnetic Topological Insulator , 2018, Chinese Physics Letters.
[26] M. Blanco-Rey,et al. Prediction and observation of an antiferromagnetic topological insulator , 2018, Nature.
[27] Bing-Lin Gu,et al. Intrinsic magnetic topological insulators in van der Waals layered MnBi2Te4-family materials , 2018, Science Advances.
[28] Haijun Zhang,et al. Topological Axion States in the Magnetic Insulator MnBi_{2}Te_{4} with the Quantized Magnetoelectric Effect. , 2018, Physical review letters.
[29] J. Chu,et al. Electrically induced 2D half-metallic antiferromagnets and spin field effect transistors , 2018, Proceedings of the National Academy of Sciences.
[30] Wang Yao,et al. Two-dimensional itinerant ferromagnetism in atomically thin Fe3GeTe2 , 2018, Nature Materials.
[31] Yuanbo Zhang,et al. Gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe2 , 2018, Nature.
[32] Jie Shan,et al. Controlling magnetism in 2D CrI3 by electrostatic doping , 2018, Nature Nanotechnology.
[33] Raja Das,et al. Strong room-temperature ferromagnetism in VSe2 monolayers on van der Waals substrates , 2018, Nature Nanotechnology.
[34] Hanwen Wang,et al. Electric-field control of magnetism in a few-layered van der Waals ferromagnetic semiconductor , 2018, Nature Nanotechnology.
[35] Xiuling Li,et al. Modulation of Metal and Insulator States in 2D Ferromagnetic VS2 by van der Waals Interaction Engineering , 2017, Advanced materials.
[36] A. Arnau,et al. Highly-ordered wide bandgap materials for quantized anomalous Hall and magnetoelectric effects , 2017, 1810.00235.
[37] Matthias Troyer,et al. WannierTools: An open-source software package for novel topological materials , 2017, Comput. Phys. Commun..
[38] S. Louie,et al. Discovery of intrinsic ferromagnetism in two-dimensional van der Waals crystals , 2017, Nature.
[39] K. Kokh,et al. Dual nature of magnetic dopants and competing trends in topological insulators , 2016, Nature Communications.
[40] G. Gu,et al. Imaging Dirac-mass disorder from magnetic dopant atoms in the ferromagnetic topological insulator Crx(Bi0.1Sb0.9)2-xTe3 , 2014, Proceedings of the National Academy of Sciences.
[41] Arash A. Mostofi,et al. An updated version of wannier90: A tool for obtaining maximally-localised Wannier functions , 2014, Comput. Phys. Commun..
[42] Cheol-hee Park,et al. Crystal structure, properties and nanostructuring of a new layered chalcogenide semiconductor, Bi2MnTe4 , 2013 .
[43] Q. Xue,et al. Fermi-level tuning of epitaxial Sb2Te3 thin films on graphene by regulating intrinsic defects and substrate transfer doping. , 2011, Physical review letters.
[44] S. Grimme,et al. A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu. , 2010, The Journal of chemical physics.
[45] A. Balatsky,et al. Impurity-induced states on the surface of three-dimensional topological insulators , 2009, 0910.4604.
[46] L. Fu. Hexagonal warping effects in the surface states of the topological insulator Bi2Te3. , 2009, Physical review letters.
[47] G. Kresse,et al. From ultrasoft pseudopotentials to the projector augmented-wave method , 1999 .
[48] Burke,et al. Generalized Gradient Approximation Made Simple. , 1996, Physical review letters.
[49] Kresse,et al. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. , 1996, Physical review. B, Condensed matter.
[50] Blöchl,et al. Projector augmented-wave method. , 1994, Physical review. B, Condensed matter.