Thermopile infrared detector fabricated with dry silicon etchant XeF2

This paper presents a dry etching technique for removing bulk silicon in fabrication of thermopile. We first study the characteristics of XeF2 etching by performing a set of nine orthogonal experiments which are designed by using the Taguchi methods. Also included in this paper is a complete description of design, fabrication and test of thermopile released through this approach.