论文信息 - Filament formation in a tapered GaAlAs optical amplifier

Filament formation in a tapered GaAlAs optical amplifier

Filament formation in a tapered GaAlAs amplifier with an output width of 320 μm is characterized by injecting an input beam with a superimposed sinusoidal intensity modulation (30 μm period, 30% peak‐to‐peak modulation). Strong seeded filamentation of the output near field, and large far field side lobes are observed for powers above approximately 1 W. Time dependent decay of the main far field lobe, characterized by a time constant of several microseconds, is used to separate the effects of localized carrier density variations from the thermal contribution to intensity and phase distortion of the output beam.

[1] Michael L. Tilton,et al. Modeling broad-area semiconductor optical amplifiers , 1993 .

[2] W. Chow,et al. Wave‐optical effects in semiconductor laser amplifiers , 1989 .

[3] Lew Goldberg,et al. Periodic filaments in reflective broad area semiconductor optical amplifiers , 1992 .

[4] Leo J. Missaggia,et al. High-power strained-layer InGaAs/AlGaAs tapered traveling wave amplifier , 1992 .

[5] Alan H. Paxton,et al. Filament formation in semiconductor laser gain regions , 1991 .

[6] David J. Webb,et al. Comparison of the facet heating behavior between AlGaAs single quantum‐well lasers and double‐heterojunction lasers , 1992 .

[7] N. Kothari,et al. Instability Growth And Filamentation of Very Intense Laser Beams in Self-Focusing Media , 1990 .

[8] Lew Goldberg,et al. 21 W broad area near‐diffraction‐limited semiconductor amplifier , 1992 .

[9] D. R. Speck,et al. Propagation of a high‐intensity laser pulse with small‐scale intensity modulation , 1974 .

[10] David G. Mehuys,et al. 2.0 W CW, diffraction-limited tapered amplifier with diode injection , 1992 .

[11] J. Goodman. Introduction to Fourier optics , 1969 .

[12] J. Fujimoto,et al. Spatial and frequency dependence of four-wave mixing in broad-area diode lasers , 1988 .