Epitaxial ScxAl1−xN on GaN exhibits attractive high-K dielectric properties
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D. Jena | H. Xing | P. Fay | Sai Mu | V. Gund | K. Nomoto | C. G. Van de Walle | A. Lal | Len van Deurzen | J. Casamento | Wesley Turner | Hyun-Jik Lee | T. Maeda | L. van Deurzen