Development of the 2/sup nd/ generation SVCS using IEGT

A new semiconductor power device, IEGT (injection enhanced gate transistor) has been developed by TOSHIBA Semiconductor Company. It is a metal oxide gate semiconductor device and offers advantages compared with the conventional GTO device, the smaller gate power and the higher turn-on and turn-off capability. A converter using the IEGT has been successfully developed. It will be used in static VAr compensators etc. This paper describes the design, test results and advantages of the developed 21 MVA static VAr compensator using IEGT compared with the GTO converter.

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