论文信息 - High performance 0.1 /spl mu/m partially depleted SOI CMOSFET

High performance 0.1 /spl mu/m partially depleted SOI CMOSFET

The partially depleted SOI MOSFET (PD-SOI) has been found to be an attractive device due to advantages such as full dielectric isolation and reduced junction capacitance compared to the bulk Si device (Assaderaghi et al, 1997; Maeda et al, 2000). However, the floating body effect occurs on PD-SOI devices, resulting in threshold voltage reduction and noise overshoot (Tseng et al, 1997). Body contact structures have been proposed to improve the floating body effect (Huang et al, 1998). This paper describes high performance 0.1 /spl mu/m generation SOI MOSFET technology with body contact structure (BC-SOI) which was used to investigate the device characteristics as well as thermal effects in comparison with the floating body SOI MOSFET (FB-SOI), which is without body contact. The dynamic-threshold voltage SOI MOSFET (DTMOS) was also investigated.

[1] Mansun Chan,et al. On the power dissipation in dynamic threshold silicon-on-insulator CMOS inverter , 1998 .

[2] Babcock,et al. Correlation Between Low-frequency Noise Overshoot In SOI MOSFETs And Frequency Dependence Of Floating Body Effect , 1997, 1997 Symposium on VLSI Technology.