Synthesis of Large-Area InSe Monolayers by Chemical Vapor Deposition.

Recently, 2D materials of indium selenide (InSe) layers have attracted much attention from the scientific community due to their high mobility transport and fascinating physical properties. To date, reports on the synthesis of high-quality and scalable InSe atomic films are limited. Here, a synthesis of InSe atomic layers by vapor phase selenization of In2 O3 in a chemical vapor deposition (CVD) system, resulting in large-area monolayer flakes or thin films, is reported. The atomic films are continuous and uniform over a large area of 1 × 1 cm2 , comprising of primarily InSe monolayers. Spectroscopic and microscopic measurements reveal the highly crystalline nature of the synthesized InSe monolayers. The ion-gel-gated field-effect transistors based on CVD InSe monolayers exhibit n-type channel behaviors, where the field effect electron mobility values can be up to ≈30 cm2 V-1 s-1 along with an on/off current ratio, of >104 at room temperature. In addition, the graphene can serve as a protection layer to prevent the oxidation between InSe and the ambient environment. Meanwhile, the synthesized InSe films can be transferred to arbitrary substrates, enabling the possibility of reassembly of various 2D materials into vertically stacked heterostructures, prompting research efforts to probe its characteristics and applications.

[1]  Y. Nishina,et al.  Resonance Raman scattering study on exciton and polaron anisotropies in InSe , 1980 .

[2]  P. Ajayan,et al.  Evolution of the electronic band structure and efficient photo-detection in atomic layers of InSe. , 2014, ACS nano.

[3]  L. Yin,et al.  Synthesis, properties and applications of 2D layered MIIIXVI (M = Ga, In; X = S, Se, Te) materials. , 2016, Nanoscale.

[4]  W. Cao,et al.  Back Gated Multilayer InSe Transistors with Enhanced Carrier Mobilities via the Suppression of Carrier Scattering from a Dielectric Interface , 2014, Advanced materials.

[5]  Lain-Jong Li,et al.  Monolayer MoSe2 grown by chemical vapor deposition for fast photodetection. , 2014, ACS nano.

[6]  Zhixian Zhou,et al.  Improved carrier mobility in few-layer MoS2 field-effect transistors with ionic-liquid gating. , 2013, ACS nano.

[7]  P. Ordejón,et al.  Nanotexturing To Enhance Photoluminescent Response of Atomically Thin Indium Selenide with Highly Tunable Band Gap. , 2016, Nano letters.

[8]  K. Shepard,et al.  Boron nitride substrates for high-quality graphene electronics. , 2010, Nature nanotechnology.

[9]  A. Akl,et al.  Effect of Se addition on optical and electrical properties of chalcogenide CdSSe thin films , 2016 .

[10]  Lain‐Jong Li,et al.  Hole mobility enhancement and p -doping in monolayer WSe2 by gold decoration , 2014 .

[11]  R. Sankar,et al.  Intrinsic Electron Mobility Exceeding 10³ cm²/(V s) in Multilayer InSe FETs. , 2015, Nano letters.

[12]  V. Fal’ko,et al.  Electrons and phonons in single layers of hexagonal indium chalcogenides from ab initio calculations , 2014, 1403.4389.

[13]  Yu Zhang,et al.  Epitaxial monolayer MoS2 on mica with novel photoluminescence. , 2013, Nano letters.

[14]  Laurence Eaves,et al.  High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe. , 2017, Nature nanotechnology.

[15]  T. Zhai,et al.  2D layered group IIIA metal chalcogenides: synthesis, properties and applications in electronics and optoelectronics , 2016 .

[16]  Cheng-Cheng Liu,et al.  Monolayer group-III monochalcogenides by oxygen functionalization: a promising class of two-dimensional topological insulators , 2018, npj Quantum Materials.

[17]  L. Caputi,et al.  The Advent of Indium Selenide: Synthesis, Electronic Properties, Ambient Stability and Applications , 2017, Nanomaterials.

[18]  Emily F. Smith,et al.  Engineering p–n junctions and bandgap tuning of InSe nanolayers by controlled oxidation , 2017 .

[19]  Kuang-I Lin,et al.  Atom-Dependent Edge-Enhanced Second-Harmonic Generation on MoS2 Monolayers. , 2018, Nano letters.

[20]  Lain-Jong Li,et al.  Large-Area Aiming Synthesis of WSe2 Monolayers , 2013, 1304.7365.

[21]  S. Banerjee,et al.  Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils , 2009, Science.

[22]  C. Klinke,et al.  Solution-Processed Two-Dimensional Ultrathin InSe Nanosheets , 2016 .

[23]  Lain-Jong Li,et al.  Highly flexible MoS2 thin-film transistors with ion gel dielectrics. , 2012, Nano letters.

[24]  J. Pu,et al.  Electron–hole doping asymmetry of Fermi surface reconstructed in a simple Mott insulator , 2016, Nature Communications.

[25]  W. Cao,et al.  Ultrahigh photo-responsivity and detectivity in multilayer InSe nanosheets phototransistors with broadband response† , 2015 .

[26]  Lain‐Jong Li,et al.  Highly Flexible and High‐Performance Complementary Inverters of Large‐Area Transition Metal Dichalcogenide Monolayers , 2016, Advanced materials.

[27]  A. Shukla,et al.  A high performance graphene/few-layer InSe photo-detector. , 2015, Nanoscale.

[28]  D. Mazumdar,et al.  Recent advances in investigations of the electronic and optoelectronic properties of group III, IV, and V selenide based binary layered compounds , 2017 .

[29]  Shenyang Huang,et al.  Largely Tunable Band Structures of Few-Layer InSe by Uniaxial Strain. , 2017, ACS Applied Materials and Interfaces.

[30]  L. Eaves,et al.  Tuning the Bandgap of Exfoliated InSe Nanosheets by Quantum Confinement , 2013, Advanced materials.

[31]  Jia Shi,et al.  InSe monolayer: synthesis, structure and ultra-high second-harmonic generation , 2018 .

[32]  P. Ajayan,et al.  Chemical vapor deposition growth of crystalline monolayer MoSe2. , 2014, ACS nano.

[33]  C. Hu,et al.  Field-effect transistors built from all two-dimensional material components. , 2014, ACS nano.

[34]  K. Novoselov,et al.  High Broad‐Band Photoresponsivity of Mechanically Formed InSe–Graphene van der Waals Heterostructures , 2015, Advanced materials.

[35]  A. Shukla,et al.  Anodic bonded 2D semiconductors: from synthesis to device fabrication , 2013, Nanotechnology.

[36]  P. Chiu,et al.  High-Mobility InSe Transistors: The Role of Surface Oxides. , 2017, ACS nano.

[37]  Richard Martel,et al.  Photooxidation and quantum confinement effects in exfoliated black phosphorus. , 2015, Nature materials.

[38]  Jing Kong,et al.  Synthesis of few-layer hexagonal boron nitride thin film by chemical vapor deposition. , 2010, Nano letters.

[39]  S. Lau,et al.  Wafer-Scale Synthesis of High-Quality Semiconducting Two-Dimensional Layered InSe with Broadband Photoresponse. , 2017, ACS nano.

[40]  Peng Li,et al.  Intercorrelated In-Plane and Out-of-Plane Ferroelectricity in Ultrathin Two-Dimensional Layered Semiconductor In2Se3. , 2018, Nano letters.

[41]  Lain‐Jong Li,et al.  Large-area synthesis of highly crystalline WSe(2) monolayers and device applications. , 2014, ACS nano.

[42]  Lain‐Jong Li,et al.  Synthesis of Large‐Area MoS2 Atomic Layers with Chemical Vapor Deposition , 2012, Advanced materials.

[43]  L. Caputi,et al.  Indium selenide: an insight into electronic band structure and surface excitations , 2017, Scientific Reports.

[44]  Yidong Xia,et al.  Ab initio study of carrier mobility of few-layer InSe , 2016 .

[45]  Lain-Jong Li,et al.  Flexible and stretchable thin-film transistors based on molybdenum disulphide. , 2014, Physical chemistry chemical physics : PCCP.

[46]  Kuang-I Lin,et al.  Photoreflectance study of the near-band-edge transitions of chemical vapor deposition-grown mono- and few-layer MoS2 films , 2016 .