Field-effect transistor (FET) bibliography 1967, 1968

This bibliography covers the years 1967 and 1968. It is a continuation of the field-effect transistor bibliography printed in the IEEE Trans. Electron Devices, Vol. ED-14, pp. 710-717, October 1967, covering the years from 1939-1966, and 28 references for 1967. For the sake of completeness, the aforementioned 28 references have been included in the present bibliography.

[1]  D. E. Brewer,et al.  Low power computer memory system , 1967, AFIPS '67 (Fall).

[2]  R. H. Crawford.  Capacitive feed through calculations in MOSFET IC's , 1967 .

[3]  J. Mavor,et al.  Equivalent two-port thermal-noise representation of metal-oxide semiconductor transistors , 1967 .

[4]  S. D. Brotherton.  Dependence of MOS transistor threshold voltage on substrate resistivity , 1967 .

[5]  A. B. Grebene.  A practical method for reducing the effects of parasitic capacitances in integrated circuits , 1967 .

[6]  T. Klein.  Technology and performance of integrated complementary MOS circuits , 1969 .

[7]  R. W. Lade,et al.  Charge storage in metal-silicon nitride-silicon capacitors , 1967 .

[8]  H. E. Nigh,et al.  A sealed gate IGFET , 1967 .

[9]  B. D. Roberts,et al.  Computer models of the field-effect transistor , 1967 .

[10]  F. Berz,et al.  Low frequency noise in MOS field effect transistors , 1967 .

[11]  K. Heime.  Chemically sprayed CdS thin-film transistors , 1967 .

[12]  W. Leighton.  Room temperature instabilities in MOS structures with pyrolytic SiO 2 films , 1967 .

[13]  J. E. Meyer,et al.  A self-scanned solid-state image sensor , 1967 .

[14]  R. Wagner,et al.  A dual offset gate thin-film transistor , 1967 .

[15]  H. C. Graaff,et al.  Drift phenomena in CdSe thin film FET's , 1967 .

[16]  G. Neumark.  Theory of the influence of hot electron effects on insulated gate field effect transistors , 1967 .

[17]  J. Hauser,et al.  Characteristics of junction field effect devices with small channel length-to-width ratios , 1967 .

[18]  R. M. Warner.  Comparing MOS and bipolar integrated circuits , 1967, IEEE Spectrum.

[19]  S. R. Hofstein.  Stabilization of MOS devices , 1967 .

[20]  J. F. Allison,et al.  Silicon-on-Sapphire Complementary MOS Memory Cells , 1967 .

[21]  F. Fitchen,et al.  Conversion gain null in FET mixers , 1967 .

[22]  F. Wooten.  A proposed ultra-sensitive miniature temperature sensor , 1967 .

[23]  A. S. Grove,et al.  Effects of ionizing radiation on oxidized silicon surfaces and planar devices , 1967 .

[24]  Jr. R.J. Phelan.  InSb-GaAsP infrared to visible light converter , 1967 .

[25]  W. Hooper,et al.  An epitaxial GaAs field-effect transistor , 1967 .

[26]  R. Muller,et al.  Statistical considerations in MOSFET calculations , 1967 .

[27]  H. Ruegg,et al.  Measurement of the drift velocity of holes in silicon at high-field strengths , 1967 .

[28]  Comparison of the neutron radiation tolerance of bipolar and junction field effect transistors , 1967 .

[29]  Operation of field-effect transistors at liquid-helium temperature , 1967 .

[30]  C. Salama,et al.  Evaporated silicon thin-film transistors , 1967 .

[31]  F. Reizman,et al.  Optical thickness measurement of SiO2Si3N4 films on silicon , 1967 .

[32]  A. Holmes-Siedle,et al.  SURVEY OF RADIATION EFFECTS IN METAL--INSULATOR--SEMICONDUCTOR DEVICES. , 1967 .

[33]  R. Zuleeg.  Multi-channel field-effect transistor theory and experiment , 1967 .

[34]  B. G. Watkins.  A Low-Power Multiphase Circuit Technique , 1967 .

[35]  J. Rajchman,et al.  Integrated Computer Memories , 1967 .

[36]  A. B. Grebene.  Parasitic bulk resistances in junction-gate FETs , 1967 .

[37]  Ronald Pasqualini.  Design Considerations for a Parallel Bit-Organized MOS Memory , 1967, IEEE Trans. Electron. Comput..

[38]  Simon M. Sze,et al.  Tunneling in metal-oxide-silicon structures , 1967 .

[39]  A. Weinberger.  Large Scale Integration of MOS Complex Logic: A Layout Method , 1967 .

[40]  Chih-Tang Sah,et al.  Current saturation and drain conductance of junction-gate field-effect transistors , 1967 .

[41]  MOS transistors with anodically formed metal oxides as gate insulators , 1967 .

[42]  H. Dill.  Noise contribution of the offset-gate i.g.f.e.t. with an additional gate electrode , 1967 .

[43]  R. W. Lade,et al.  Surface inversion of MOS diodes , 1967 .

[44]  A. Bilotti.  A distributed MOS attenuator , 1967 .

[45]  H. C. Graaff,et al.  Temperature influence on the channel conductance of m.o.s. transistors , 1967 .

[46]  J. Mavor.  Low-noise operation of m.o.s. transistors in common-gate connection , 1967 .

[47]  A. S. Grove,et al.  Characteristics of the Surface‐State Charge (Qss) of Thermally Oxidized Silicon , 1967 .

[48]  J. S. Vogel,et al.  Nonlinear distortion and mixing processes in field-effect transistors , 1967 .