Graphene nanoribbon field-effect transistors

We demonstrated that an electronic field-effect transistor (FET) can be made from patterned monolayer or bilayer graphene nanoribbons. The FET performance can be achieved regardless of structural defects (either edge defects or topological defects). The I-V characteristics of resulting FETs are similar to those made from single-walled carbon nanotubes. This one-dimensional functional device is very useful for future nanoscale electronics.