论文信息 - Study of the influence of temperature on the behavior of the VDMOS transistor

Study of the influence of temperature on the behavior of the VDMOS transistor

This paper presents an accurate one-dimensional device model for the simulation of power MOSFET transistors, taking into account the effects of temperature as an interactive variable during simulation.<<ETX>>

R. Bouchakour | Christophe Lallement | C. Lallement | R. Bouchakour

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