论文信息 - Evaluation of Soft Error Hardness of FinFET and FDSOI Processes by the PHITS-TCAD Simulation System

Evaluation of Soft Error Hardness of FinFET and FDSOI Processes by the PHITS-TCAD Simulation System

The impact of soft errors has been serious with process scaling of integrated circuits. Simulation methods for soft errors in FDSOI and FinFET are indispensable. We analyze the soft error tolerance in 28-nm FDSOI and 22-nm FinFET processes by the PHIT-TCAD simulation system. It consists of two parts, the particle transport simulation by PHITS (Particle and Heavy Ion Transport code System) and device simulations. We investigate the soft error rates on 28-nm FDSOI and 22-nm FinFET by the PHITS-TCAD simulation system. The soft error tolerance in 22-nm FinFET is 10 times or more stronger than that in 28-nm FDSOI in supply voltages from 1V to 0.4V.

Furuta Jun | Kobayashi Kazutoshi | Umehara Shigehiro

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