G-band frequency doubler based on InP transferred-substrate technology

A G-band broadband frequency doubler based on InP transferred-substrate (TS) InP-DHBT technology is presented. The MMIC utilizes a two 2-finger HBTs with a total emitter size of 4 × 0.8 × 5 μm2. Total chip size is 0.9 × 0.78 mm2. The doubler delivers a maximum output power of 10 dBm at 160 GHz. At the same frequency, the circuit exhibits a conversion gain up to 4 dB and a maximum output efficiency of 14 % for a total DC consumption of 72 mW. Output power stays above 7 dBm from 140 to 180 GHz, which yields a 3-dB bandwidth of 40 GHz. The positive gain values demonstrate the inherent advantage of active multipliers against their passive counterparts.

[1]  Mehmet Kaynak,et al.  Low phase noise and high output power 367 GHz and 154 GHz signal sources in 130 nm SiGe HBT technology , 2014, 2014 IEEE MTT-S International Microwave Symposium (IMS2014).

[2]  W. Heinrich,et al.  180 GHz frequency doubler in transferred-substrate InP HBT technology with 4 dBm output power , 2013, 2013 European Microwave Integrated Circuit Conference.

[3]  A. Leuther,et al.  Single-Chip Frequency Multiplier Chains for Millimeter-Wave Signal Generation , 2009, IEEE Transactions on Microwave Theory and Techniques.

[4]  Gabriel M. Rebeiz,et al.  A 135–160 GHz balanced frequency doubler in 45 nm CMOS with 3.5 dBm peak power , 2014, 2014 IEEE MTT-S International Microwave Symposium (IMS2014).