论文信息 - GaAs on 200 mm Si wafers via thin temperature graded Ge buffers by molecular beam epitaxy - 字舞流文

GaAs on 200 mm Si wafers via thin temperature graded Ge buffers by molecular beam epitaxy

T. Topuria | P. Rice | D. Webb | C. Rossel | D. Caimi | J. Fompeyrine | M. Sousa | C. Marchiori | H. Siegwart | M. Richter | Christian Gerl