Implementation of Second-order Ku-band Chip Filter on Si Substrate with Commercial 0.18μm CMOS Technology

This study presents a Ku-band band-pass filter designed and fabricated with a commercial CMOS technology. The filter utilizes a pi-network coupling structure to construct the desired coupling and the resonant tanks on Si substrate with a compact size and the low-loss performance. A method of synthesizing pi-network filter is proposed. A 17GHz filter chip was fabricated by 0.18mum CMOS technology. The size of filter is 0.56mmtimes0.6mm and the measured pass-band insertion loss of filter is about 3.2dB

[1]  Yi-Chyun Chiang,et al.  Implementation of millimetre-wave bandpass filter with MMIC technology , 2005 .

[2]  Thomas M. Weller,et al.  Edge-coupled coplanar waveguide bandpass filter design , 2000, 2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017).

[3]  G. Dambrine,et al.  Wide- and narrow-band bandpass coplanar filters in the W-frequency band , 2003 .

[4]  A. Chin,et al.  40-GHz coplanar waveguide bandpass filters on silicon substrate , 2002, IEEE Microwave and Wireless Components Letters.

[5]  Ke-Li Wu,et al.  A compact second-order LTCC bandpass filter with two finite transmission zeros , 2003 .

[6]  Miniaturized Differential Filters For C- and Ku-Band Applications , 2003, 2003 33rd European Microwave Conference, 2003.

[7]  Jia-Sheng Hong,et al.  Microstrip filters for RF/microwave applications , 2001 .

[8]  T.M. Weller,et al.  A low-loss quartz-based cross-coupled filter integrated onto low-resistivity silicon , 2004, IEEE Transactions on Microwave Theory and Techniques.

[9]  T. Kamgaing,et al.  Design of RF filters using silicon integrated passive components , 2004, Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004..