Process sensitivities in exemplary chemo-epitaxy directed self-assembly integration

Directed Self Assembly (DSA) using block copolymers (BCP) has received considerable attention over the past few years as a potential complementary lithographic technique. While many are focused on adapting DSA integrations to high volume manufacturing, the key to the technology’s success lies in its ability to generate low defect patterns. The best way to drive the technology toward a zero defect solution is to understand the fundamentals of the block copolymer assembly, the interactions of the block copolymer with the underlying chemical pattern, and the evaluation of process parameters to obtain a high degree of order of the BCP morphologies. To this end, recent research has investigated numerous material, structural, and process sensitivities of an exemplary chemo-epitaxy line/space integration. Using the DSA flow implemented at imec, substrate properties, such as the geometry and chemistry, were studied and provided the first results regarding the dimensions of the nano-patterns and the energetic conditions necessary to obtain good alignment of the BCP. Additional parameters that have been explored include BCP film thickness and the bake conditions used to execute various steps of the flow. With this work, the key parameters that drive the assembly process have been identified. This will allow the definition of an optimized process window and materials for defect minimization.