Gate oxides in 50 nm devices: thickness uniformity improves projected reliability
暂无分享,去创建一个
A. Ghetti | J. Madic | J.D. Bude | D. Hwang | P.J. Silverman | F. Baumann | J. Bude | A. Ghetti | B. Weir | P. Silverman | Y. Ma | D. Hwang | F. Baumann | D. Monroe | T. Sorsch | G. Timp | A. Hamad | M.A. Alam | Y. Ma | B.E. Weir | A. Hamad | D. Monroe | N. X. Zhao | G.L. Timp | T.M. Oberdick | N.X. Zhao | M.M. Brown | T.W. Sorsch | M. A. Alam | J. Madic | T. M. Oberdick | M. M. Brown
[1] Soft Breakdown in Ultra-Thin Oxides , 1999 .
[2] D. Hwang,et al. Ultra-thin gate dielectrics: they break down, but do they fail? , 1997, International Electron Devices Meeting. IEDM Technical Digest.