Real-time measurements of plasma photoresist modifications: The role of plasma vacuum ultraviolet radiation and ions

Plasma-induced roughness development of photoresist (PR) can be due to synergistic interactions of surface modifications introduced by ions, bulk material modifications by ultraviolet (UV)/vacuum ultraviolet (VUV) radiation, and increased temperature. While previous work identified the individual contributions of energetic ions and UV/VUV radiation, the dynamics of the concurrent modifications remained unclear. The authors studied the interactions of plasma radiation and ions with 193 nm PR and 248 nm PR in Ar plasma by in situ ellipsometry. Ellipsometry provides valuable information on changes in film thickness and material optical properties in real-time during plasma processing. MgF2, sapphire, and glass optical filters were used to reduce the plasma-material interactions to the radiation component of a selected wavelength range in the UV/VUV spectral region. Ar plasma radiation and its transmission through different optical filters were characterized by VUV spectroscopy. This characterization allowed ...

[1]  M. Wertheimer,et al.  Vacuum ultraviolet to visible emission from hydrogen plasma: Effect of excitation frequency , 2000 .

[2]  David B. Graves,et al.  Plasma-surface interactions of model polymers for advanced photoresists using C4F8∕Ar discharges and energetic ion beams , 2007 .

[3]  P. Gillet,et al.  The effect of alginate, hyaluronate and hyaluronate derivatives biomaterials on synthesis of non-articular chondrocyte extracellular matrix , 2005, Journal of materials science. Materials in medicine.

[4]  David B. Graves,et al.  Understanding the Roughening and Degradation of 193 nm Photoresist during Plasma Processing: Synergistic Roles of Vacuum Ultraviolet Radiation and Ion Bombardment , 2009 .

[5]  R. Partridge Vacuum‐Ultraviolet Absorption Spectrum of Polyethylene , 1966 .

[6]  Kenneth J. Miller,et al.  Additivity methods in molecular polarizability , 1990 .

[7]  S. Engelmann,et al.  Near-surface modification of polystyrene by Ar+: Molecular dynamics simulations and experimental validation , 2007 .

[8]  G. Oehrlein,et al.  Investigation of surface modifications of 193 and 248nm photoresist materials during low-pressure plasma etching , 2004 .

[9]  H. Hiraoka,et al.  Radiation chemistry of poly(methacrylates) , 1977 .

[10]  S. Engelmann,et al.  Study of 193nm photoresist degradation during short time fluorocarbon plasma exposure. I. Studies of modified layer formation , 2008 .

[11]  A. Bazin,et al.  Mechanisms involved in HBr and Ar cure plasma treatments applied to 193 nm photoresists , 2009 .

[12]  D. Graves,et al.  Fluorocarbon plasma etching of silicon: Factors controlling etch rate , 2004 .

[13]  Robert L. Bruce,et al.  On the absence of post-plasma etch surface and line edge roughness in vinylpyridine resists , 2011 .

[14]  J. Kielkopf,et al.  Excited-state populations of H2 in the positive column of a glow discharge , 1988 .

[15]  Elsa Reichmanis,et al.  Organic Materials Challenges for 193 nm Imaging , 1999 .

[16]  David B. Graves,et al.  Synergistic effects of vacuum ultraviolet radiation, ion bombardment, and heating in 193nm photoresist roughening and degradation , 2008 .

[17]  Michael R. Wertheimer,et al.  Vacuum ultraviolet photolysis of hydrocarbon polymers , 2005 .

[18]  David B. Graves,et al.  Photoresist modifications by plasma vacuum ultraviolet radiation: The role of polymer structure and plasma chemistry , 2010 .

[19]  S. Engelmann,et al.  Studies of plasma surface interactions during short time plasma etching of 193 and 248 nm photoresist materials , 2006 .

[20]  G. Hadziioannou,et al.  Investigating 248 and 193nm resist degradation during reactive ion oxide etching , 2006 .

[21]  David B. Graves,et al.  Study of ion and vacuum ultraviolet-induced effects on styrene- and ester-based polymers exposed to argon plasma , 2009 .

[22]  S. Onari Vacuum Ultraviolet Absorption Spectra of Synthesized Polymer Films , 1969 .

[23]  N. Negishi,et al.  Deposition control for reduction of 193 nm photoresist degradation in dielectric etching , 2005 .

[24]  S. Engelmann,et al.  Molecular dynamics simulations of near-surface modification of polystyrene : Bombardment with Ar+ and Ar+/radical chemistries , 2008 .

[25]  David B. Graves,et al.  Relationship between nanoscale roughness and ion-damaged layer in argon plasma exposed polystyrene films , 2010 .

[26]  David B. Graves,et al.  Electron, ion and vacuum ultraviolet photon effects in 193 nm photoresist surface roughening , 2010 .

[27]  Xiaocong Yuan,et al.  Adjustable refractive index modulation for a waveguide with SU-8 photoresist by dual-UV exposure lithography. , 2006, Applied optics.

[28]  William R. Brunsvold,et al.  193-nm single-layer resist materials: total consideration of design, physical properties, and lithographic performances on all major alicyclic platform chemistries , 2001, SPIE Advanced Lithography.

[29]  R. Houk,et al.  Molecular hydrogen emission in the vacuum ultraviolet from an inductively coupled plasma , 1996 .

[30]  R. Partridge Exciton Interpretation of the Vacuum‐Ultraviolet Absorption Spectra of Saturated Organic Polymers , 1968 .

[31]  S. Engelmann,et al.  Dependence of Polymer Surface Roughening Rate on Deposited Energy Density During Plasma Processing , 2009 .

[32]  C. K. Inoki,et al.  Damage of ultralow k materials during photoresist mask stripping process , 2006 .

[33]  R. Bruce,et al.  Ion and Vacuum Ultraviolet Photon Beam Effects in 193 nm Photoresist Surface Roughening: The Role of the Adamantyl Pendant Group , 2011 .

[34]  David B. Graves,et al.  Plasma-surface interactions of advanced photoresists with C4F8∕Ar discharges: Plasma parameter dependencies , 2009 .

[35]  D. Clark,et al.  An investigation of the vacuum UV spectra of inductivity coupled RF plasmas excited in inert gases as a function of some of the operating parameters , 1980 .

[36]  Hiroichi Kawahira,et al.  Changes of chemical nature of photoresists induced by various plasma treatments and their impact on LWR , 2006, SPIE Advanced Lithography.

[37]  S. Engelmann,et al.  Dependence of photoresist surface modifications during plasma-based pattern transfer on choice of feedgas composition: Comparison of C4F8- and CF4-based discharges , 2009 .

[38]  F. Celii,et al.  Study of C4F8/N2 and C4F8/Ar/N2 plasmas for highly selective organosilicate glass etching over Si3N4 and SiC , 2003 .

[39]  D. Clark,et al.  ESCA applied to polymers. XV. RF Glow-discharge modification of polymers, studied by means of ESCA in terms of a direct and radiative energy-transfer model† , 1977 .

[40]  Role of polymer structure and ceiling temperature in polymer roughening and degradation during plasma processing: a beam system study of P4MS and PαMS , 2010 .

[41]  D. Graves,et al.  Plasma-polymer interactions: A review of progress in understanding polymer resist mask durability during plasma etching for nanoscale fabrication , 2011 .