A scalable X-parameter model for GaAs and GaN FETs

A new nonlinear FET model formulation is proposed which comprises an X-parameter (S-function or Poly Harmonic Distortion) intrinsic model combined with lumped extrinsic circuit model shells This enables the correct gate width scaling of the intrinsic and extrinsic model by finger number and unit gate width. An extraction technique is described based on de-embedding the X-parameters to the intrinsic plane. A verification example of scaling of a 10×90um 0.15um pHEMT X-parameter model (generated from a scalable compact model) down to a 4×50um device (a factor of 4.5), is shown without loss of accuracy in power sweep and loadpull contour results compared to the reference compact model simulation.

[1]  Stephen A. Maas,et al.  Microwave Mixers , 1986 .

[2]  P. J. Tasker,et al.  A novel measurement based method enabling rapid extraction of a RF Waveform Look-Up table based behavioral model , 2008, 2008 IEEE MTT-S International Microwave Symposium Digest.

[3]  Jianjun Xu,et al.  Nonlinear validation of arbitrary load X-parameter and measurement-based device models , 2009, 2009 73rd ARFTG Microwave Measurement Conference.

[4]  M. Iwamoto,et al.  Device modeling with NVNAs and X-parameters , 2010, 2010 Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits.

[5]  D.E. Root,et al.  Polyharmonic distortion modeling , 2006, IEEE Microwave Magazine.

[6]  David E. Root,et al.  Bias-dependent linear, scalable millimeter-wave FET model , 2000, 2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017).

[7]  Ingo Wolff.  Microwave mixers, Second Edition, by Stephen A. Maas, Artech House, Boston, London 1993. 375 pages, 165 pages, 8 tables, 161 references, index. Price: US $76.00 and £59.00 in Europe. ISBN 0-98006-605-1 , 1993 .