N-Face Metal–Insulator–Semiconductor High-Electron-Mobility Transistors With AlN Back-Barrier

We present a high-performance SiN/AlGaN (cap)/GaN (channel)/AlN (barrier)/GaN (buffer) metal-insulator-semiconductor high-electron-mobility transistor grown on the N-face, in which the 2-D electron gas (2DEG) is induced at the top GaN/AlN interface. The use of AlN eliminates alloy disorder scattering to the 2DEG and provides strong back-barrier confinement of the 2DEG under high electric fields for device scaling. Devices with 0.7-mum gate length showed a current-gain cutoff frequency (fT) of 17 GHz and a power-gain cutoff frequency (f max) of 37 GHz. A continuous-wave output power density of 7.1 W/mm was measured at 4 GHz, with 58% power-added efficiency and a large-signal gain of 15.3 dB at a drain bias of 35 V.

[1]  James S. Speck,et al.  N‐face high electron mobility transistors with a GaN‐spacer , 2007 .

[2]  James S. Speck,et al.  Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth , 2007 .

[3]  K. Hirata,et al.  Polarization Engineering on Buffer Layer in GaN-Based Heterojunction FETs , 2008, IEEE Transactions on Electron Devices.

[4]  Thomas Ihn.  Two-dimensional electron gases in heterostructures , 2009 .

[5]  Michael S. Shur,et al.  AlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor , 2001 .

[6]  Ke Xu,et al.  Effects of film polarities on InN growth by molecular-beam epitaxy , 2003 .

[7]  S. Denbaars,et al.  GaN–GaN junctions with ultrathin AlN interlayers: Expanding heterojunction design , 2002 .

[8]  Toshiaki Matsui,et al.  AlGaN/GaN Heterostructure Field-Effect Transistors on 4H-SiC Substrates with Current-Gain Cutoff Frequency of 190 GHz , 2008 .

[9]  A. Kurdoghlian,et al.  GaN double heterojunction field effect transistor for microwave and millimeterwave power applications , 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

[10]  Molecular beam epitaxial growth of normal and inverted two-dimensional electron gases in AlGaN/GaN based heterostructures , 1999 .

[11]  James S. Speck,et al.  Growth and Electrical Characterization of N-face AlGaN/GaN Heterostructures , 2005 .

[12]  N. Gogneau,et al.  Growth kinetics of N-face polarity GaN by plasma-assisted molecular-beam epitaxy , 2004 .

[13]  P. Parikh,et al.  40-W/mm Double Field-plated GaN HEMTs , 2006, 2006 64th Device Research Conference.

[14]  S. Keller,et al.  AlGaN/GaN high electron mobility transistors with InGaN back-barriers , 2006, IEEE Electron Device Letters.

[15]  S. Keller,et al.  High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates , 2006, IEEE Electron Device Letters.

[16]  James S. Speck,et al.  N-polar GaN∕AlGaN∕GaN high electron mobility transistors , 2007 .

[17]  Umesh K. Mishra,et al.  Recessed Slant Gate AlGaN/GaN High Electron Mobility Transistors with 20.9 W/mm at 10 GHz , 2007 .